NDLI: GaN smart power chip technology

Content Provider	IEEE Xplore Digital Library
Author	Chen, K.J.
Copyright Year	2009
Description	Author affiliation: Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong (Chen, K.J.)
Abstract	Wide-bandgap GaN-based semiconductor materials are attracting considerable attention as the preferred material for power electronics applications, owning to their superior properties including high breakdown electric-field, high carrier density, high electron mobility and high saturation velocity. In this paper, the technologies for implementing GaN smart power ICs will be introduced based on the large-size, low-cost and highly scalable GaN-on-Si platform. High-voltage power components (normally-off power transistors and HEMT-compatible rectifiers) and low-voltage periphery devices for digital/analog mixed-signal circuits are successfully integrated with the same fabrication process. In particular, key analog functional blocks such as voltage reference generators and comparators are demonstrated using GaN-based technology for the first time. The optimized voltage reference generator achieved less than 70 ppm/°C drift and can be used as a reference voltage in various biasing and sensing circuits. The temperature-dependent performance of a conventional comparator is characterized and a new temperature-compensated comparator circuit is also demonstrated. The positive limiting level of the temperature-compensated comparator is less than 450 ppm/°C drift compared to 1400 ppm/°C in the conventional comparator
Starting Page	403
Ending Page	407
File Size	8831718
Page Count	5
File Format	PDF
ISBN	9781424442973
DOI	10.1109/EDSSC.2009.5394230
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-12-25
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium nitride Voltage Semiconductor materials Integrated circuit technology Power electronics Electric breakdown Semiconductor device breakdown Charge carrier density Electron mobility Power integrated circuits voltage reference and planar integration Wide Bandgap GaN smart power power converter
Content Type	Text
Resource Type	Article

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