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Single-Branch Wide-Swing-Cascode Subthreshold GaN Monolithic Voltage Reference
| Content Provider | MDPI |
|---|---|
| Author | Bimbi, Cesare Pennisi, Salvatore Privitera, Salvatore Pulvirenti, Francesco |
| Copyright Year | 2022 |
| Description | A voltage reference generator in GaN IC technology for smart power applications is described, analyzed, and simulated. A straightforward design procedure is also highlighted. Compared to previous low-power monolithic solutions, the proposed one is based on a single branch and on transistors operating in a subthreshold. The circuit provides a nearly 2.7 V reference voltage under 4 V to 24 V supply at room temperature and with typical transistor models. The circuit exhibits a good robustness against large process variations and improves line regulation (0.105 %V) together with a reduction in area occupation (0.05 $mm^{2}$), with a reduced current consumption of 2.7 µA (5 µA) in the typical (worst) case, independent of supply. The untrimmed temperature coefficient is 200 ppm/°C. |
| Starting Page | 1840 |
| e-ISSN | 20799292 |
| DOI | 10.3390/electronics11121840 |
| Journal | Electronics |
| Issue Number | 12 |
| Volume Number | 11 |
| Language | English |
| Publisher | MDPI |
| Publisher Date | 2022-06-09 |
| Access Restriction | Open |
| Subject Keyword | Electronics Information and Library Science Algan/gan Hemt Smart Power Wide Bandgap Voltage Reference Planar Integration |
| Content Type | Text |
| Resource Type | Article |
