NDLI: The physical phenomena responsible for excess noise in short-channel MOS devices

Content Provider	IEEE Xplore Digital Library
Author	Navid, R. Dutton, R.W.
Copyright Year	2002
Description	Author affiliation: Center for Integrated Syst., Stanford Univ., CA, USA (Navid, R.; Dutton, R.W.)
Abstract	The physical phenomena responsible for the excess noise in short-channel MOS devices are explained based on the non-equilibrium noise theory. Comparing the MOS excess noise with the well known excess noise in a mesoscopic conductor, it is suggested that the physical origins of both are the same. Using this theory, it is proposed that the noise sources used in the impedance field method (IFM) should contain not only the usual thermal noise component, but also a partially suppressed shot noise term which accounts for the limited number of inelastic scattering events in the channel. The theoretical predictions of a simplified model based on this theory are presented and compared with the measurement results. It is shown both theoretically and experimentally that the non-equilibrium noise component is smaller when a larger gate to source voltage is applied. The accurate calculation of the suppression factor, which is in general a function of device terminal voltages, remains a challenge.
Sponsorship	Japan Soc. Appl. Phys. IEEE Electron Devices Soc. IEICE IEEE EDS Japan Chapter IEEE EDS Kansai Chapter
Starting Page	75
Ending Page	78
File Size	356811
Page Count	4
File Format	PDF
ISBN	4891140275
DOI	10.1109/SISPAD.2002.1034520
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2002-09-04
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Japan Soc. of Applied Physics
Subject Keyword	MOS devices Conductors Voltage Impedance Predictive models Semiconductor device modeling Electrons Scattering Radio frequency Noise figure
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Mr. Siddhartha Mukherjee siddhartha@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	ndl-support@iitkgp.ac.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Libarray of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

The physical phenomena responsible for excess noise in short- channel mos devices.

RF simulations and physics of the channel noise parameters within MOS transistors

Accurate MOS Gate Impedance Model for 200MHz-20GHz Frequency Range

Efficient parameter extraction techniques for a new surface-potential-based MOS model for RF applications

Analytical passive mixer power gain models

The N-channel MOS device as an RF amplifier

Enhanced analytic noise model for RF CMOS design

Accurate Noise Modeling of HEMT for Low-Noise Applications

Predictive And Efficient Modeling Of Substrate Currents In N-channel MOS-Transistors

The physical phenomena responsible for excess noise in short-channel MOS devices

Similar Documents

The physical phenomena responsible for excess noise in short- channel mos devices.

RF simulations and physics of the channel noise parameters within MOS transistors

Accurate MOS Gate Impedance Model for 200MHz-20GHz Frequency Range

Efficient parameter extraction techniques for a new surface-potential-based MOS model for RF applications

Analytical passive mixer power gain models

The N-channel MOS device as an RF amplifier

Enhanced analytic noise model for RF CMOS design

Accurate Noise Modeling of HEMT for Low-Noise Applications

Predictive And Efficient Modeling Of Substrate Currents In N-channel MOS-Transistors

The physical phenomena responsible for excess noise in short-channel MOS devices