NDLI: Structural, photoelectrical characterization of Cu(InAl)Se$_{2}$ thin films and the fabrication of Cu(InAl)Se$

Content Provider	SpringerLink
Author	Kavitha, B. Dhanam, M.
Copyright Year	2013
Abstract	Films of Cu(InAl)Se$_{2}$ were deposited onto glass substrates by SILAR (successive ionic layer adsorption and reaction) method. All the deposited films were found to be polycrystalline in nature exhibiting the chalcopyrite structure with the crystallite orientation along (112), (220/204) and (116/312) directions. The photocurrent was found to increase with increase in film thickness and also with increase of light intensity. Photocurrent spectra showed a peak related to the band-to-band transition. The spectral response of Cu(InAl)Se$_{2}$ thin films was studied by allowing the radiation to pass through a series of interference filters in the wavelength range 300 to 1200 nm. Films of higher thickness exhibited higher photosensitivity while lower thickness films exhibited moderate photosensitivity. Cu(InAl)Se$_{2}$-based solar cells with different types of buffer layers such as CdS, CdS:Cu, CdS:In were fabricated. The current and voltage were measured using an optical power meter and an electrometer and the fabricated solar cells were illuminated using 100 mW/cm$^{2}$ white light under AM1 conditions.
Starting Page	25
Ending Page	30
Page Count	6
File Format	PDF
ISSN	17388090
Journal	Electronic Materials Letters
Volume Number	9
Issue Number	1
e-ISSN	20936788
Language	English
Publisher	The Korean Institute of Metals and Materials
Publisher Date	2013-01-15
Publisher Place	Springer
Access Restriction	Subscribed
Subject Keyword	successive ionic layer adsorption and reaction Cu(InAl)Se$_{2}$ thin films structure photoconduction solar cell Optical and Electronic Materials Condensed Matter Physics Nanotechnology and Microengineering Characterization and Evaluation of Materials Nanotechnology
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials

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