NDLI: Characterization of GaN/AlGaN epitaxial layers grown by metalorganic chemical vapour deposition for high electron mobility transistor applications

Content Provider	SpringerLink
Author	Joshi, Bhubesh Chander Mathew, Manish Joshi, B. C. Kumar, D. Dhanavantri, C.
Copyright Year	2010
Abstract	GaN and AlGaN epitaxial layers are grown by a metalorganic chemical vapour deposition (MOCVD) system. The crystalline quality of these epitaxially grown layers is studied by different characterization techniques. PL measurements indicate band edge emission peak at 363.8 nm and 312 nm for GaN and AlGaN layers respectively. High resolution XRD (HRXRD) peaks show FWHM of 272 and 296 arcsec for the (0 0 0 2) plane of GaN and GaN in GaN/AlGaN respectively. For GaN buffer layer, the Hall mobility is 346 cm$^{2}$/V-s and carrier concentration is 4.5 × 10$^{16}$/cm$^{3}$. AFM studies on GaN buffer layer show a dislocation density of 2 × 10$^{8}$/cm$^{2}$ by wet etching in hot phosphoric acid. The refractive indices of GaN buffer layer on sapphire at 633 nm are 2.3544 and 2.1515 for TE and TM modes respectively.
Starting Page	135
Ending Page	141
Page Count	7
File Format	PDF
ISSN	03044289
Journal	Pramana
Volume Number	74
Issue Number	1
e-ISSN	09737111
Language	English
Publisher	Springer-Verlag
Publisher Date	2010-01-30
Publisher Place	India
Access Restriction	Subscribed
Subject Keyword	Gallium nitride aluminium gallium nitride high electron mobility transistors metalorganic chemical vapour deposition photoluminescence high resolution X-ray diffraction Astrophysics and Astroparticles Astronomy, Observations and Techniques Physics
Content Type	Text
Resource Type	Article
Subject	Physics and Astronomy

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