NDLI: X-Ray Diffraction and Photoluminescence Studies of InN Grown by Plasma-Assisted Molecular Beam Epitaxy with Low Free-Carrier Concentration

Content Provider	SpringerLink
Author	Chandolu, A. Song, D. Y. Holtz, M. E. Gherasoiu, I. Nikishin, S. A. Bernussi, A. Holtz, M. W.
Copyright Year	2009
Abstract	We report studies of InN grown by plasma-assisted molecular beam epitaxy. GaN templates were first grown on sapphire substrates followed by InN overgrown at 457°C to 487°C. Atomic force microscopy shows the best layers to exhibit step-flow growth mode of the InN, with a root-mean-square roughness of 0.7 nm for the 2 μm × 2 μm scan and 1.4 nm for the 5 μm × 5 μm scan.␣Measurements of the terrace edges indicate a step height of 0.28 nm. Hall measurements at room temperature give mobilities ranging from 1024 cm$^{2}$/V s to 1904 cm$^{2}$/V s and the electron concentrations are in the range of 5.9 × 10$^{17}$ cm$^{−3}$ to 4.2 × 10$^{18}$ cm$^{−3}$. Symmetric and asymmetric reflection x-ray diffraction measurements were performed to obtain lattice constants a␣and c. The corresponding hydrostatic and biaxial stresses are found to range from −0.08 GPa to −0.29 GPa, and −0.05 GPa to −0.32 GPa, respectively. Low-temperature photoluminescence peak energies range from 0.67 eV to 0.70 eV, depending on residual biaxial stress, hydrostatic pressure, and electron concentrations. The electron concentration dependence of the estimated Fermi level is analyzed using Kane’s two-band model and conduction-band renormalization effects.
Starting Page	557
Ending Page	562
Page Count	6
File Format	PDF
ISSN	03615235
Journal	Journal of Electronic Materials
Volume Number	38
Issue Number	4
e-ISSN	1543186X
Language	English
Publisher	Springer US
Publisher Date	2009-01-09
Publisher Place	Boston
Access Restriction	Subscribed
Subject Keyword	InN molecular beam epitaxy photoluminescence Solid State Physics and Spectroscopy Electronics and Microelectronics, Instrumentation Characterization and Evaluation of Materials Optical and Electronic Materials
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Electronic, Optical and Magnetic Materials Materials Chemistry Electrical and Electronic Engineering

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