NDLI: A study of vacancies and vacancy pair defects in 4H SiC grown by halide chemical vapor deposition

Content Provider	SpringerLink
Author	Zvanut, M. E. Ngetich, G. Chung, H. J. Polyakov, A. Y. Skowronski, M.
Copyright Year	2007
Abstract	The understanding of the structure and associated defect level of a point defect in SiC is important because the material is to be used both as a semiconductor and semi-insulator. Production of the latter is achieved by compensation of unavoidable impurities using defects that require more energy for ionization than the unintentional donors or acceptors. The purpose of the present work is to measure the defect energy level of one center in high resistivity 4H SiC using photo-induced electron paramagnetic resonance (photo-EPR). The center is identified as SI-5, an EPR signal that others have attributed to the negative charge state of the carbon vacancy carbon antisite pair, $V_C C_{Si}^ - .$ The photo-threshold for detection of the signal is 0.75 eV in samples with resistivity activation energy, E$_{a}$, of 0.5 eV or smaller. For samples with larger E$_{a}$, SI-5 is detected only after irradiation with photon energy greater than 2.5 eV. The results suggest that $V_C C_{Si}^{ - - / - }$ is 0.75 eV below the conduction band edge and that the negative to neutral level is within 0.1 eV of $V_C C_{Si}^{- - / -} .$
Starting Page	678
Ending Page	681
Page Count	4
File Format	PDF
ISSN	09574522
Journal	Journal of Materials Science: Materials in Electronics
Volume Number	19
Issue Number	8-9
e-ISSN	1573482X
Language	English
Publisher	Springer US
Publisher Date	2007-09-15
Publisher Place	Boston
Access Restriction	Subscribed
Subject Keyword	Characterization and Evaluation of Materials Optical and Electronic Materials
Content Type	Text
Resource Type	Article
Subject	Biomedical Engineering Electronic, Optical and Magnetic Materials Bioengineering Condensed Matter Physics Biophysics Atomic and Molecular Physics, and Optics Electrical and Electronic Engineering Biomaterials

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