NDLI: Comparison of carrier velocity in 0.25 mu m gate-length conventional, pseudomorphic, and lattice-matched modulation-doped FETs at 300 K and 77 K

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Proceedings of the Workshop on Low Temperature Semiconductor Electronics,

1989 Proceedings of the Workshop on Low Temperature Semiconductor Electronics (Cat. No.89TH0252-7)

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Comparison of carrier velocity in 0.25 mu m gate-length conventional, pseudomorphic, and lattice-matched modulation-doped FETs at 300 K and 77 K

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Comparison of carrier velocity in 0.25 mu m gate-length conventional, pseudomorphic, and lattice-matched modulation-doped FETs at 300 K and 77 K

Content Provider	IEEE Xplore Digital Library
Author	Fu, S.T. Liu, S.-M.J. Das, M.B. Chao, P.C. Duh, K.-H.G. Ho, P. Ballingall, J.M.
Copyright Year	1989
Description	Author affiliation: Dept. of Electr. Eng., Pennsylvania State Univ., University Park, PA, USA (Fu, S.T.; Liu, S.-M.J.; Das, M.B.)
Abstract	The microwave characterization of 0.25- mu m gate-length MODFETs at 300 and 77 K is reported. Microwave S-parameter measurements of MODFETs from 0.45 to 20 GHz were used to extract their HF equivalent network parameters. After allowing for the parasitic gate and drain-to-gate feedback capacitances, the intrinsic unity-current gain frequency was determined. Using a theoretical model, the effective carrier saturation velocity and average velocity ( nu /sub av/) were obtained for the conventional AlGaAs/GaAs, the pseudomorphic AlGaAs/InGaAs/GaAs, and lattice-matched InAlAs/InGaAs/InAlAs on InP samples at 300 K and 77 K. The extracted values of nu /sub a/ range from 0.8210/sup 7/ cm/s to 3.8410/sup 7/ cm/s, respectively, depending on the type of MODFET and operating temperature. These high values of nu /sub av/ indicate that the velocity overshoot effect is present in the devices tested.<>
Starting Page	19
Ending Page	23
File Size	352475
Page Count	5
File Format	PDF
DOI	10.1109/LTSE.1989.50174
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1989-08-07
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium arsenide Feedback Hafnium HEMTs Indium gallium arsenide Indium compounds Scattering parameters MODFETs Microwave measurements Parasitic capacitance
Content Type	Text
Resource Type	Article

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