NDLI: Testing 90 nm microcontroller SRAM PUF quality

Content Provider	IEEE Xplore Digital Library
Author	Barbareschi, M. Battista, E. Mazzeo, A. Mazzocca, N.
Copyright Year	2015
Description	Author affiliation: Dept. of Electr. Eng. & Inf. Technol., Univ. of Naples “Federico II”, Naples, Italy (Barbareschi, M.; Battista, E.; Mazzeo, A.; Mazzocca, N.)
Abstract	In digital systems, Static Random Access Memories (SRAMs) play an important role since they are available in almost every digital devices and are able to realize Physically Unclonable Functions (PUFs), which can enable security primitives over a wide range of devices without needing additional hardware resources. Indeed, each SRAM presents an unpredictable and unique pattern, established when they are powered-up, which can be useful as key generator and for authentication mechanisms. Before exploiting SRAMs as PUFs, they have to be qualified in terms of stability since the pattern behavior of SRAMs might be heavily influenced by a wide variety of working conditions, such as temperature and applied voltage. In this paper we present the result of an experimental campaign, conducted over real 90nm SRAMs, which aim is to deeply investigate the power-up pattern behavior under different power supply strategies through the PUF quality analysis. In particular we show the reliability, uniqueness and uniformity for SRAMs embedded in STM32F3 and STM32F4 microcontrollers for more than 50 devices.
Starting Page	1
Ending Page	6
File Size	757826
Page Count	6
File Format	PDF
ISBN	9781479919994
DOI	10.1109/DTIS.2015.7127360
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-04-21
Publisher Place	Italy
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Temperature measurement Employee welfare Microcontrollers Power supplies Random access memory Reliability Security
Content Type	Text
Resource Type	Article

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