NDLI: Comparison of differential and large-signal sensing scheme for subthreshold/superthreshold FinFET SRAM considering variability

Content Provider	IEEE Xplore Digital Library
Author	Ming-Long Fan Hu, V.P.-H. Yin-Nien Chen Pin Su Ching-Te Chuang
Copyright Year	2012
Description	Author affiliation: Department of Electronics Engineering & Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan (Ming-Long Fan; Hu, V.P.-H.; Yin-Nien Chen; Pin Su; Ching-Te Chuang)
Abstract	This paper investigates the viability and compares the merits of small-signal differential sensing and large-signal single-ended sensing scheme for FinFET SRAM under fin Line-Edge-Roughness (fin LER) and Work-Function-Variation (WFV). The local random variation of selected cell, leakage (and its variation) from unselected cells on the selected Bit-Line (BL), and variation of sense amplifier offset voltage (for differential sensing) and trip voltage (for large-signal sensing) are considered simultaneously at subthreshold (V=0.4V) and superthreshold (V=1.0V) regions. For differential sensing, the subthreshold sensing margin is severely degraded by the variation in Bitline voltage and sufficient time before enabling the sense amplifier is required to improve the limited margin. For large-signal sensing scheme, we show that there is large disparity between the sense “0” margin and sense “1” margin with the significantly worse sense “0” margin limiting the affordable number of cells per Bitline. The possibility of using double-fin PFET in large-signal sensing inverter to improve the sense “0” margin is examined, and shown to be of limited benefit, especially for operation in subthreshold region. Compared with BULK CMOS, the superior electrostatic integrity and variability of FinFET enhances/enables the feasibility of differential sensing in subthreshold/superthreshold SRAM applications.
Starting Page	1
Ending Page	2
File Size	663424
Page Count	2
File Format	PDF
ISBN	9781457720833
ISSN	19308868
e-ISBN	9781457720840
DOI	10.1109/VLSI-TSA.2012.6210169
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-04-23
Publisher Place	Taiwan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Sensors Inverters FinFETs Random access memory Dispersion Arrays Electrostatics
Content Type	Text
Resource Type	Article

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