NDLI: High Rate Reactive Ion Etching Using Collimated Beam Produced by 10-3 Torr Magnetron Discharge

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High Rate Reactive Ion Etching Using Collimated Beam Produced by 10-3 Torr Magnetron Discharge

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High Rate Reactive Ion Etching Using Collimated Beam Produced by 10-3 Torr Magnetron Discharge

Content Provider	IEEE Xplore Digital Library
Author	Sekine, M. Arikado, T. Okano, H. Horiike, Y.
Copyright Year	1986
Description	Author affiliation: VLSI Research Center, Toshiba Corp. 1, Toshiba-cho, Saiwai-ku, Kawasaki, 210, Japan (Sekine, M.; Arikado, T.; Okano, H.; Horiike, Y.)
Abstract	A new high rate RIE technology using a magnetron discharge in the low pressure of 10-3 Torr has been developed. A racetrack type permanent magnet, which is set at an anode, allows an intense plasma generation near a wafer surface on a cathode. The magnetic field divergence to the cathode provides uniform plasma intensity, leading to the uniform etching. The lower pressure discharge, at which ion collisions are reduced within the sheath, generates normally collimated ions. Thus, the directional etching, which does not depend so much on the aspect ratio variations, has been established.
Starting Page	5
Ending Page	6
File Size	861381
Page Count	2
File Format	PDF
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1986-05-28
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Japan Society of Applied Physics
Subject Keyword	Etching Collimators Magnetic flux Cathodes Magnetic fields Plasma applications Plasma density Electrons Plasma accelerators Surface discharges
Content Type	Text
Resource Type	Article

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