NDLI: Total ionizing dose effects on I-V and noise characteristics of MOS transistors in a 0.18 μm CMOS Image Sensor process

Content Provider	IEEE Xplore Digital Library
Author	Greig, T. Stefanov, K. Holland, A. Clarke, A. Burt, D. Gow, J.
Copyright Year	2013
Description	Author affiliation: e2v Ltd., Chelmsford, UK (Burt, D.) \|\| Centre for Electron. Imaging, Open Univ., Milton Keynes, UK (Greig, T.; Stefanov, K.; Holland, A.; Clarke, A.; Gow, J.)
Abstract	This paper presents an investigation into total ionizing dose (TID) effects on I-V and noise characteristics of MOS transistors manufactured in a 0.18 μm CMOS Image Sensor (CIS) process. The CIS are intended for use in space science missions experiencing harsh radiation environments, such as ESA's forthcoming JUICE mission. Devices were therefore irradiated to various TID levels up to 1 Mrad. Following irradiation, significant leakage current and threshold voltage modification was observed, and this was found to be more severe for devices with small channel geometries. Noise spectral density measurements were also performed at the different irradiation steps. Noise in the smaller geometry devices was found to increase following irradiation, whereas for larger devices it was not significantly affected. These findings enable future assessment of the effects of TID on functional and electro-optical characteristics of high performance CIS designs for use in space.
Starting Page	1
Ending Page	5
File Size	1274320
Page Count	5
File Format	PDF
ISBN	9781467350570
DOI	10.1109/RADECS.2013.6937391
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-09-23
Publisher Place	UK
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Radiation effects Noise MOSFET Logic gates Leakage currents total ionizing dose (TID) CMOS image sensor (CIS) metal oxide semiconductor (MOS) transistor
Content Type	Text
Resource Type	Article

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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