NDLI: On G-boosting and cyclostationary noise mechanisms in low-voltage CMOS differential Colpitts VCOs

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Si IC development for high efficiency envelope tracking power amplifiers

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60 GHz low noise amplifiers with 1 kV CDM protection in 40 nm LP CMOS

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On G-boosting and cyclostationary noise mechanisms in low-voltage CMOS differential Colpitts VCOs

A highly efficient 1-Watt broadband class-J SiGe power amplifier at 700MHz

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SiGe HBT compact modeling for production-type circuit design

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2011 IEEE 11th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)

2009 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

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Digest of Papers. 2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.

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2001 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems. Digest of Papers (IEEE Cat. No.01EX496)

2000 Topical Meetings on Silicon Monolithic Integrated Circuits in RF Systems. Digest of Papers (Cat. No.00EX397)

1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems. Digest of Papers (Cat. No.98EX271)

On G-boosting and cyclostationary noise mechanisms in low-voltage CMOS differential Colpitts VCOs

Content Provider	IEEE Xplore Digital Library
Author	Koukab, A. Amiri, O.T.
Copyright Year	2012
Description	Author affiliation: Swiss Federal Institute of Technology in Lausanne (EPFL), 1015 Lausanne Switzerland (Koukab, A.; Amiri, O.T.)
Abstract	This paper presents a theoretical study of CMOS differential Colpitts VCOs. The objective is to provide a deep understanding of the different mechanisms that impact the performances of these VCOs, namely the Gm-boosting and cyclostationary noise. The developed methodology and expressions can be used to analyze, optimize and build new VCO topologies. A novel topology with an optimized gate to source (GS) feedback is proposed. It exhibits a figure of merit (FOM) better than −190 dBc/Hz/mW for all the frequency offsets.
Starting Page	65
Ending Page	68
File Size	595028
Page Count	4
File Format	PDF
ISBN	9781457713170
e-ISBN	9781457713187
DOI	10.1109/SiRF.2012.6160136
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-01-16
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Voltage-controlled oscillators Phase noise Topology Transconductance Transistors Switching circuits thermal noise Voltage-controlled oscillator (VCO) Colpitts phase noise flicker noise
Content Type	Text
Resource Type	Article

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