NDLI: A 350 µW 2.3 GHz integer-N frequency synthesizer for body area network applications

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A CMOS quadrature oscillator with deterministic output sequence

A 73 to 83 GHz, 9-mW injection-locked oscillator in 65-nm CMOS technology

Improvement of VCO's phase noise performance by using an off-chip open-stub

Design and optimization of a low-noise cross-coupled fundamental VCO in 90nm CMOS for 60GHz applications

A 21.4% tuning range 13 GHz Quadrature voltage-controlled oscillator utilizing manipulatable inherent bimodal oscillation phenomenon in standard 90-nm CMOS process

On-chip artificial transmission lines, enabling compact Si-based mmWave ICs

High-Q SU8 based above-IC inductors for RF power devices

Integrated W-band RECTENNA (rectifying antenna) with Ge quantum dot Schottky Diode

Compact mm-wave power combiners in 65nm CMOS-SOI

Millimeter-wave integrated waveguides on silicon

A 24GHz multi-channel frequency synthesizer in a 0.18µm BiCMOS technology for wireless sensor networks

A UWB CMOS SoC RF transmitter with analog baseband predistortion and on-package printed balun

X-Band +24 dBm CMOS power amplifier with transformer power combining

Linear CMOS power amplifiers employing a novel layout configuration for improved stability and long-term reliability

Complementary RF LDMOS module for 12 V DC/DC converter and 6 GHz power applications

Modeling and design of a low-power injection-locked frequency divider in 90nm CMOS for 60GHz applications

Broadband twin tail fins antenna on HR SOI silicon substrate for 60 GHz applications

Digitally controlled ring oscillator using fraction-based series optimization for inductorless reconfigurable all-digital PLL

Effect of gate oxide scaling on RF performance of SOI MOSFETs

Waveguide tuner stabilized ultra low phase noise 60 GHz SiGe:C oscillator MMIC

Innovative 8-shaped inductors integrated in an advanced BiCMOS technology

Small size high isolation Wilkinson power splitter for 60 GHz wireless sensor network applications

RF antenna switch using dynamic threshold SOI MOSFET

Emitter CMP process optimization for self-aligned SiGe:C HBT fabrication

Analysis and design of low-power - low-noise crystal oscillators accounting for electro-mechanical energy conversion aspects

Mutual-inductance-free X-topology model synthesis of multi-conductor lines accounting for floating ground references

A 350 µW 2.3 GHz integer-N frequency synthesizer for body area network applications

Silicon solutions for RF front-end applications

Scalable compact modeling for SiGe HBTs suitable for microwave radar applications

RF extraction of self-heating effects in FinFETs of various geometries

Hybrid cascode with an isolated NLDMOS and HBT for X-Band power amplifier applications

Wideband cancellation of second order intermodulation distortions in a 60GHz zero-IF mixer

A fully integrated homodyne upconverter MMIC in SiGe:C for 60 GHz wireless applications

A low-power 5-75-GHz common-gate subharmonic mixer in 65-nm CMOS

A broadband SiGe power amplifier in an efficient polar transmitter using envelope-tracking for mobile WiMAX

SiGe technology and circuits for automotive radar applications

A fully integrated homodyne downconverter MMIC in SiGe:C for 60 GHz wireless applications

A fully integrated 60 GHz transmitter front-end in SiGe BiCMOS technology

A 60 GHz UWB impulse radio transmitter with integrated antenna in CMOS65nm SOI technology

122 GHz transmitter using frequency doublers

Design and fabrication considerations in developing high-Q MEMS capacitors and inductors

Reduction of impedance and feedthrough parasitics of RF micromechanical resonators

A monolithic RF-MEMS filter with continuously-tunable center-frequency and bandwidth

CMOS integrated digital RF MEMS capacitors

Robustness and reliability of BiCMOS embedded RF-MEMS switch

Microwave to terahertz characterization of carbon nanotube materials

Electromagnetic crystal based components for terahertz characterization and applications

Si and SiGe based monolithic integrated antennas for electromagnetic sensors and for wireless communications

Terahertz-capability nanoscale InGaAs HEMT design guidelines by means of full-band Monte Carlo device simulations

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2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers.

2001 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems. Digest of Papers (IEEE Cat. No.01EX496)

2000 Topical Meetings on Silicon Monolithic Integrated Circuits in RF Systems. Digest of Papers (Cat. No.00EX397)

1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems. Digest of Papers (Cat. No.98EX271)

A 350 µW 2.3 GHz integer-N frequency synthesizer for body area network applications

Content Provider	IEEE Xplore Digital Library
Author	Masuch, J. Delgado-Restituto, M.
Copyright Year	2011
Description	Author affiliation: Institute of Microelectronics of Seville (IMSE-CNM-CSIC) - University of Seville, Spain (Masuch, J.; Delgado-Restituto, M.)
Abstract	This paper presents a low power integer-N synthesizer with an output frequency of 2.3 GHz. The complete PLL has been integrated in a 90 nm CMOS technology and operates from a 1 V supply voltage. The synthesizer has been optimized for power consumption by employing an efficient quadrature VCO and a phase-switching prescaler. It achieves a phase noise of −121 dBc/Hz @3MHz while consuming only 350 µW in the PLL core. The typical reference spur level is about −40 dBc.
Starting Page	105
Ending Page	108
File Size	526188
Page Count	4
File Format	PDF
ISBN	9781424480609
e-ISBN	9781424480616
DOI	10.1109/SIRF.2011.5719342
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-01-17
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Frequency synthesizers Phase noise Phase locked loops Frequency measurement Voltage-controlled oscillators Power demand Synthesizers
Content Type	Text
Resource Type	Article

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