NDLI: Electro-thermal modeling of trench-isolated SiGe HBTs using TCAD

Content Provider	IEEE Xplore Digital Library
Author	Petrosyants, K.O. Torgovnikov, R.A.
Copyright Year	2015
Description	Author affiliation: Moscow Inst. of Electron. & Math, Nat. Res. Univ. "Higher Sch. of Econ.", Moscow, Russia (Petrosyants, K.O.) \|\| Inst. for Design Problems in Microelectron., Russia (Torgovnikov, R.A.)
Abstract	The modern SiGe HBT structure with shallow and deep trench isolation (STI and DTI) is analyzed from electrothermal standpoint using TCAD system. The electrical parameters β, $f_{T},$ $f_{max},$ maximal temperature $T_{max},$ and thermal resistance $R_{TH}$ are under consideration. TCAD simulation confirms the fact that the presence of STI and DTI in SiGe HBT structures gains the self-heating effect in comparison with traditional Si BJT structures, where DTI is not used. It is shown that for high power regimes $(I_{C}$ = 0.5-3 mA; $V_{CE}$ = 4-5 V) the set of electrical parameters β, $f_{T},$ $f_{max}$ significantly degrade, temperature $T_{max}$ can reach the critical values about 500 K, and the thermal resistance RTH increases thrice in HBT structure with STI and DTI. These results agree with published experimental data.
Starting Page	172
Ending Page	175
File Size	1253269
Page Count	4
File Format	PDF
ISBN	9781479986002
ISSN	10652221
DOI	10.1109/SEMI-THERM.2015.7100156
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-03-15
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon germanium Heterojunction bipolar transistors Diffusion tensor imaging Silicon Temperature distribution Heating Thermal resistance thermal resistance Silicon-Germanium HBT transistor structure trench isolation high power/high frequency electrical parameters electro-thermal design temperature distribution maximal operation temperature
Content Type	Text
Resource Type	Article

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