NDLI: Sub-continuum thermal analysis of strained-Si/SiGe transistor scaling

Content Provider	IEEE Xplore Digital Library
Author	Etessam-Yazdani, K. Asheghi, M.
Copyright Year	2005
Description	Author affiliation: Dept. of Electr. & Comput. Eng., Carnegie Mellon Univ., Pittsburgh, PA, USA (Etessam-Yazdani, K.)
Abstract	The paper focuses on the effect of nano-scale thermal phenomena on the performance of strained-Si transistors. The impact of SiGe underlayer and interface roughness on the lateral thermal conductivity of the transistor channel at room temperature is studied. The experimental data and predictions for thin Si layer thermal conductivity and the solutions of the Boltzmann transport equations (BTE) for phonon transport in the strained-Si/SiGe bilayer configuration are used to estimate the effect of self-heating on some of the key parameters of future generations of strained-Si transistors. The analysis presented shows that, due to the continuous increase of self-heating in the future, the merits of strained-Si transistors will be suppressed, unless various parameters involved in the design of these devices are revised to maintain the existing merits.
Starting Page	208
Ending Page	213
File Size	764248
Page Count	6
File Format	PDF
ISBN	0780389859
ISSN	10652221
DOI	10.1109/STHERM.2005.1412181
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-03-15
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon germanium Germanium silicon alloys Phonons Thermal conductivity Temperature Boltzmann equation Acoustic scattering Thermal engineering Thermal resistance Heat treatment
Content Type	Text
Resource Type	Article

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