NDLI: Temperature gradient impact on electromigration failure in VLSI metallization

Content Provider	IEEE Xplore Digital Library
Author	Guo, W. Li, Z. Zhu, H. Zhang, W. Ji, Y. Sun, Y. Shen, G.
Copyright Year	1998
Description	Author affiliation: Dept. of Electron. Eng., Beijing Polytech. Univ., China (Guo, W.)
Abstract	A novel W-Ti self-heating structure was proposed which can generalize a temperature gradient and constant temperature along the metal stripe and can determine the failure location by electrical measurement. The effectiveness of this design is confirmed by different experiments. A metal line resistance method was used to determine the temperature distribution on the metal line. A series of electromigration tests were performed at positive and negative temperature gradients. The results indicate that the negative temperature gradient greatly improved the mean time to failure (MTF) of electromigration, changed the failure location distribution and caused a new tendency of resistance change which the authors dubbed the "new balance phase".
Starting Page	122
Ending Page	127
File Size	497865
Page Count	6
File Format	PDF
ISBN	0780344863
ISSN	10652221
DOI	10.1109/STHERM.1998.660397
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1998-03-10
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Electromigration Very large scale integration Metallization Thermal resistance Thermal conductivity Temperature measurement Equations Automatic testing Temperature control Electrical resistance measurement
Content Type	Text
Resource Type	Article

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