NDLI: Green region stimulated emission in optically pumped InGaN/GaN MQW nanocolumn arrays of triangular lattice

Content Provider	IEEE Xplore Digital Library
Author	Araki, R. Kishino, K. Ishizawa, S. Yamano, K. Nagashima, K. Kikuchi, A.
Copyright Year	2010
Description	Author affiliation: Sophia Univ., 7-1, Kioi-cho, Chiyoda-ku, Tokyo 102-8554, Japan (Araki, R.; Kishino, K.; Ishizawa, S.; Yamano, K.; Nagashima, K.; Kikuchi, A.)
Abstract	520–565 nm wavelength stimulated emissions were successfully obtained under room temperature (RT) optical excitation for triangular-lattice GaN-based nanocolumn arrays, in which InGaN/GaN multiple-quantum-well (MQW) was integrated at the top of each nanocolumn. The GaN nanocolumn array was prepared with selective area growth (SAG) of rf-plasma assisted molecular beam epitaxy (rf-MBE); the diameter and height of the GaN nanocolumns were 100–300 nm and 0.2–2.0 µm, respectively. This experiment demonstrates prospects of GaN nanocolumns for application to green emitting devices.
Starting Page	23
Ending Page	24
File Size	645354
Page Count	2
File Format	PDF
ISBN	9781424456833
ISSN	08999406
e-ISBN	9781424456840
DOI	10.1109/ISLC.2010.5642772
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-09-26
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium nitride Stimulated emission Quantum well devices Lattices Optical pumping Scanning electron microscopy Optical device fabrication
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Electrical and Electronic Engineering

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