NDLI: Design of voltage comparator integrated circuit with normally-on MESFETs on 4H-SiC semiconductor

Content Provider	IEEE Xplore Digital Library
Author	Banu, V. Godignon, P. Millan, J.
Copyright Year	2015
Description	Author affiliation: D+T Microelectron. A.I.E., Barcelona, Spain (Banu, V.) \|\| CNM, IMB, Barcelona, Spain (Godignon, P.; Millan, J.)
Abstract	This paper continues our previous works about the integrated circuits development on the 4H-SiC semiconductor, based on finger gate MESFETs. It describes a comparator designed exclusively with normally-on MESFETs and epitaxial resistors. For this novel circuit design we have used the SPICE models previously extracted from devices further used for fabrication of functional complex analog and digital circuitry (thermally compensated analog voltage reference, basic logic gate and various flip-flops).The schematic is presented in detail from the block schematic to the transistor level. The comparator waveforms and the time delays are presented for zero, positive and negative reference levels both at RT and 250°C. The Comparator circuit was successfully simulated using sinusoidal and triangular signals at 100 kHz and 200 kHz. However, the presented waveforms are only for 100 kHz sinusoidal signal.
Starting Page	171
Ending Page	174
File Size	686197
Page Count	4
File Format	PDF
ISBN	9781479988624
ISSN	1545827X
e-ISBN	9781479988631
DOI	10.1109/SMICND.2015.7355198
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-10-12
Publisher Place	Romania
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MESFETs Silicon carbide Integrated circuits Logic gates Fingers Resistors MESFET Integrated Circuit Silicon Carbide 4H-SiC Voltage Comparator High temperature
Content Type	Text
Resource Type	Article

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