NDLI: Photo-induced instability and temperature dependence of amorphous In-Ga-Zn-O thin film transistors

Content Provider	IEEE Xplore Digital Library
Author	Jie Chen Jie Xu Mingxiang Wang Lu Cai
Copyright Year	2013
Description	Author affiliation: Dept. of Microelectron., Soochow Univ., Suzhou, China (Jie Chen; Jie Xu; Mingxiang Wang; Lu Cai)
Abstract	The photo-induced instability of amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) is investigated. Device characteristics under white light illumination with various intensities and its spontaneous recovery at room temperature after illumination are observed. All the observed phenomena, especially the variation of threshold voltage and subthreshold swing, are explained by a simple model based on the photon generated electrons and oxygen vacancy defects in the a-IGZO channel. Further more, the temperature dependence of transfer characteristics for a-IGZO TFTs can be also explained with the same model.
Starting Page	690
Ending Page	693
File Size	163528
Page Count	4
File Format	PDF
ISBN	9781479912414
ISSN	19461550
e-ISBN	9781479904808
DOI	10.1109/IPFA.2013.6599254
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-07-15
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Thin film transistors Lighting Temperature Temperature measurement Electron traps Temperature dependence Semiconductor device measurement temperature dependence amorphous In-Ga-Zn-O (a-IGZO) thin-film transistor (TFT) photo-induced instability oxygen vacancy spontaneous recovery
Content Type	Text
Resource Type	Article

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