NDLI: Application of breakthrough failure analysis techniques on 90nm devices with an EOS fail

Content Provider	IEEE Xplore Digital Library
Author	Bailon, M.F. Salinas, P.F. Arboleda, J.S. Miranda, J.C.
Copyright Year	2005
Description	Author affiliation: Intel Technol. Philippines Inc., Cavite, Philippines (Bailon, M.F.; Salinas, P.F.; Arboleda, J.S.; Miranda, J.C.)
Abstract	In this investigation, a combination of old and new FA techniques has been utilized in the analysis of EOS failure in 90nm devices. We illustrate how information from conventional techniques and new innovative techniques can lead to successful root cause analysis of the failure mechanism. One of the innovative techniques used in the study is spectral analysis using infrared emission microscope (REM). It is believed that failure mechanism such as gate oxide breakdown, hot carrier effects, leaky junctions, CMOS latch-up or other leakage failures have their own unique spectrum which can be used for "defect finger-printing" analysis as presented in H. Ishizuka et al. (1990), L. WB et al. (2003), M. Rasras et al. (1997) and M. Bailon et al. (2004). It is for this purpose that spectral analysis was used during the characterization of failure mechanism in this study. Other techniques utilized were circuit simulation and frontside and backside FA techniques to physically expose the defect in the failing region.
Starting Page	56
Ending Page	58
File Size	554699
Page Count	3
File Format	PDF
ISBN	0780393015
DOI	10.1109/IPFA.2005.1469131
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-06-27
Publisher Place	Singapore
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Failure analysis Earth Observing System Circuit simulation Integrated circuit technology Spectral analysis Photoelectricity Signal analysis Java Information analysis Infrared spectra
Content Type	Text
Resource Type	Article

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
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3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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