NDLI: Physical Failure Analysis techniques for Cu/low k technology

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Physical Failure Analysis techniques for Cu/low k technology

Content Provider	IEEE Xplore Digital Library
Author	Huixian Wu Hooghan, B. Cargo, J.
Copyright Year	2003
Description	Author affiliation: Product Anal. Lab, Agere Syst., Allentown, PA, USA (Huixian Wu; Hooghan, B.; Cargo, J.)
Abstract	In this work, physical FA techniques including deprocessing and cross section analysis have been developed and applied to Cu/low k technology. Deprocessing techniques discussed include: wet chemical etching, reactive ion etching (RIE), parallel polishing, chemical mechanical polishing (CMP) and combination of these techniques. For the cross-section analysis of copper/low k samples, focused ion beam and mechanical polishing techniques have been developed and studied. Failure Analysis (FA) challenges and new failure modes, reliability issues will also be addressed.
Sponsorship	IEEE Electron Devices Soc. IEEE Reliability Soc
Starting Page	187
Ending Page	192
File Size	638243
Page Count	6
File Format	PDF
ISBN	0780377222
DOI	10.1109/IPFA.2003.1222763
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2003-07-11
Publisher Place	Singapore
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Failure analysis Copper Wet etching Integrated circuit interconnections Dielectric materials Chemical technology Delay Ion beams Integrated circuit technology High K dielectric materials
Content Type	Text
Resource Type	Article

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