NDLI: Thermal degradation and light capture performance of CuInGaSe (CIGS) and c-Si photovoltaic devices

Content Provider	IEEE Xplore Digital Library
Author	Feist, R. Mills, M. Rozeveld, S. Wood, C. Thompson, K.
Copyright Year	2010
Description	Author affiliation: The Dow Chemical Company, Midland, MI 48667 USA (Feist, R.; Mills, M.; Rozeveld, S.; Wood, C.; Thompson, K.)
Abstract	The thermal degradation and light capture performance of CuInGaSe (CIGS) and c-Si photovoltaic devices were explored. Typically thin-film polycrystalline materials such as CIGS are hypothesized to be advantaged over single crystal Si solar cells as having lower thermal performance and improved light capture response. To this end, we present our evaluation of the thermal and light capture performance of three different CIGS devices, having different absorber layer stoichiometry and bandgap (E), and a c-Si device. Our results indicate that at the cell level these CIGS and c-Si photovoltaic devices have similar thermal degradation and light capture performance. The thermal performance of the c-Si and three CIGS materials explored were on average 0.40, 0.47, 0.51, and 0.48 % efficiency/°C, respectively. At low light levels (∼150 $W/m^{2})$ the voltages generated by each device were within 90% of those generated at full light intensity (1000 $W/m^{2}).$ The current levels generated by each device trended linearly with the irradiance, and the Rs for each device increased with the irradiance although no intentional changes were made to the electrical contacts. These results indicate that both CIGS-based and c-Si devices will perform equally well in comparable real-world conditions. With regards to the performance relative to the CIGS bandgap, tuning the CIGS material stoichiometry, i.e. making it closer to CGS, should broaden the materials spectral response and provide beneficial improvements to the thermal degradation rate and the light capture performance of CIGS devices.
Starting Page	003411
Ending Page	003416
File Size	729475
Page Count	6
File Format	PDF
ISBN	9781424458905
ISSN	01608371
e-ISBN	9781424458929
DOI	10.1109/PVSC.2010.5614608
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-06-20
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Performance evaluation Thermal degradation Degradation Photonic band gap Materials Temperature Current density
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Electrical and Electronic Engineering Control and Systems Engineering

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