NDLI: Extraction of the surface recombination velocity of passivated phosphorus-doped silicon emitters

Content Provider	IEEE Xplore Digital Library
Author	Cuevas, A. Giroult-Matlakowski, G. Basore, P.A. DuBois, C. King, R.R.
Copyright Year	1994
Description	Author affiliation: Fac. of Eng., Australian Nat. Univ., Canberra, ACT, Australia (Cuevas, A.)
Abstract	An analytical procedure to extract the surface recombination velocity of the SiO/sub 2//n-type silicon interface, S/sub p/, from PCD measurements of emitter recombination currents is described. The analysis shows that the extracted values of S/sub p/ are significantly affected by the assumed material parameters for highly doped silicon, /spl tau//sub p/, /spl mu//sub p/ and /spl Delta/E/sub g//sup app/. Updated values for these parameters are used to obtain the dependence of S/sub p/ on the phosphorus concentration, N/sub D/, using both previous and new experimental data. The new evidence supports the finding that S/sub p/ increases strongly with N/sub D/.
Starting Page	1446
Ending Page	1449
File Size	408669
Page Count	4
File Format	PDF
ISBN	0780314603
DOI	10.1109/WCPEC.1994.520221
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1994-12-05
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon Current measurement Photonic band gap Velocity measurement Semiconductor process modeling Photovoltaic cells Density measurement Energy measurement Charge carrier density Neodymium
Content Type	Text
Resource Type	Article

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Extraction of the surface recombination velocity of passivated phosphorus-doped silicon emitters