NDLI: Passivation of AlGaN/GaN heterostructures with silicon nitride for insulated gate transistors

Content Provider	IEEE Xplore Digital Library
Author	Prunty, T.R. Smart, J.A. Chumbes, E.N. Ridley, B.K. Eastman, L.F. Shealy, J.R.
Copyright Year	2000
Description	Author affiliation: Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA (Prunty, T.R.)
Abstract	The effect of surface passivation on undoped AlGaN/GaN heterostructures using silicon nitride is presented. It is found that the charge density in the two dimensional electron gas (2DEG) at the AlGaN/GaN interface increases after passivation. This can be explained by the action of the passivating layer providing a positive charge at the AlGaN interface great enough to neutralize the AlGaN polarization charge, thereby eliminating surface related depletion from the 2DEG. A simple polarization model based on interface charges is presented to explain this enhancement, and is compared with Hall effect and capacitance voltage (C-V) measurements of passivated and unpassivated structures. The dependence of the charge enhancement on AlGaN barrier layer thickness, as well as Si/sub 3/N/sub 4/ thickness is given. We also show that a metal-insulator-semiconductor (MIS) structure of this type can be used to deplete 2DEG, allowing for the fabrication of insulated gate transistors.
Starting Page	208
Ending Page	214
File Size	492515
Page Count	7
File Format	PDF
ISBN	0780363817
ISSN	15293068
DOI	10.1109/CORNEL.2000.902540
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-08-07
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Passivation Aluminum gallium nitride Gallium nitride Silicon Polarization Capacitance-voltage characteristics Electrons Hall effect Capacitance measurement Current measurement
Content Type	Text
Resource Type	Article

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