NDLI: High crystalline quality titanium silicides on $n^{+}p$ and $p^{+}n$ silicon junctions by sputtering deposition of Ti/Si multilayers and annealing

Content Provider	IEEE Xplore Digital Library
Author	Revva, P. Kasstanas, A. Nassiopoulos, A.G.
Copyright Year	1998
Description	Author affiliation: Inst. of Microelectron., Nat. Center for Sci. Res. Demokritos, Attikis, Greece (Revva, P.)
Abstract	In this work, two layers of titanium, 20 nm each and three layers of silicon 40 nm the first and 20 nm the other two, are deposited alternatively using DC and RF sputtering respectively. We have also formed a silicide by deposition of a titanium layer and further annealing so that comparison to be made with the silicide formed using multilayer deposition. The advantage of forming the silicide using multilayer instead of single layer deposition is that a) the base pressure of the deposition system and b) the annealing ambient are not critical for the silicide formation.
Starting Page	166
Ending Page	168
File Size	146482
Page Count	3
File Format	PDF
ISSN	12660167
DOI	10.1109/MAM.1997.621105
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1997-03-16
Publisher Place	France
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Crystallization Titanium Silicides Silicon Sputtering Nonhomogeneous media Annealing CMOS technology Conductivity Silicidation
Content Type	Text
Resource Type	Article

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High crystalline quality titanium silicides on $n^{+}p$ and $p^{+}n$ silicon junctions by sputtering deposition of Ti/Si multilayers and annealing