NDLI: Subthreshold leakage power distribution considering within-die and die-to-die P-T-V variations

Content Provider	IEEE Xplore Digital Library
Author	Songqing Zhang Wason, V. Banerjee, K.
Copyright Year	2004
Abstract	This paper presents a probabilistic framework for full-chip estimation of subthreshold leakage power distribution considering both within-die and die-to-die variations in process (P), temperature (T) and supply voltage (V). The results obtained under this framework are compared to BSlM results and are found to he more accurate in comparison to those obtained from existing statistical models. Using this framework, a quantitative analysis of the relative sensitivities of subthreshold leakage to P-T-V variations has been presented. For the first time, the effects of die-to-die channel length and temperature variations on subthreshold leakage are studied in combination with all within-die variations. It has been shown that for accurate estimation of subthreshold leakage, it is important to consider die-to-die temperature variations which can significantly increase the leakage power due to electrothermal couplings between power and temperature. Furthermore, the full-chip leakage power distribution arising due to both within-die and die-to-die P-T-V is calculated, which is subsequently used to estimate the leakage constrained yield under the impact of these variations. The calculations show that the yield is significantly lowered under the impact of within-die and die-to-die process and temperature variations.
Sponsorship	ACM SIGDA IEEE Circuits and Syst. Soc
Starting Page	156
Ending Page	161
File Size	469141
Page Count	6
File Format	PDF
ISBN	1581139292
DOI	10.1109/LPE.2004.240888
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2004-08-11
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Association for Computing Machinery, Inc. (ACM)
Subject Keyword	Subthreshold current Power distribution Yield estimation Temperature distribution Voltage Electrothermal effects CMOS technology Temperature sensors Power generation Very large scale integration
Content Type	Text
Resource Type	Article

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A Probabilistic Framework to Estimate Full-Chip Subthreshold Leakage Power Distribution Considering Within-Die and Die-to-Die P-T-V Variations

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