NDLI: Charge state dependent point defect in high-k dielectric $HfO_{2}$

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Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)

Hf-based high-K dielectrics

Implementation of high-k gate dielectrics - a status update

Degradation of dielectric characteristics of underlying ultrathin $SiO_{2}$ films by Al adsorption in high vacuum

The influence of silicon nitride cap on NBTI and fermi pinning in $HfO_{2}$ gate stacks

Vapor-liquid hybrid deposition (VALID) of hafnium silicate films using Hf(O/sup $t/C_{4}H/sub$ $9/)_{4}$ and $Si(OC_{2}H_{5})_{4}$ precursors

Electrical characteristics of rare-earth oxides stacked-layer structures

Effects of Hf sources, oxidizing agents, and $NH_{3}$ radicals on properties of $HfAlO_{x}$ films prepared by atomic layer deposition

Charge state dependent point defect in high-k dielectric $HfO_{2}$

Solution-based fabrication of high-k gate dielectrics

Improvement in the uniformity and the thermal stability of Hf-silicate gate dielectric by plasma-nitridation

Gate dielectrics on strained-Ge layers on Si/sub $1-x/Ge_{x}/Si$ virtual substrates

Method of increasing gate nitridation and its impact on CMOS devices

Nitrogen-related enhanced reliability degradation in nMOSFETs with 1.6 nm gate dielectric

Ultra-thin SiN gate dielectric fabricated by $N_{2}$ plasma direct nitridation

Effects of interactions between $HfO_{2}$ and poly-Si on MOSCAP and MOSFET electrical behavior

Improved performance of FETs with $HfAlO_{x}$ gate dielectrics using optimized poly-SiGe gate electrodes

Self-organized Si suboxide $(SiO_{x},$ x<2) interfacial layers - optimization of performance and reliability in advanced devices

Impacts of hole trapping on the NBTI degradation and recovery in PMOS devices

Resonant tunneling in stacked dielectrics: a novel approach for obtaining the electron tunneling mass-conduction band offset energy products for advanced gate dielectrics

Proposal of quantum well gate insulating (QWGI) structures for band offset engineering from first-principles calculations

Ru gate electrode for a La-oxide gate insulator deposited by metalorganic chemical vapor deposition

A study on the V/sub th/ shift of $HfAlO_{x}$ MISFETs with $n^{+}/p^{+}$ poly-Si and TiN gate electrodes fabricated by replacement gate process

Energy barrier heights of ultra-thin silicon dioxide films with different metal gates

Properties of tantalum silicate thin films prepared by metalorganic decomposition

Atomic layer deposition chemistry, mechanisms and related physical properties of high permittivity dielectric oxides

Separate and independent control of interfacial band alignments and dielectric constants in complex rare-earth/transition metal (Re/Tm) oxides

Study of defects in MOS structures using $HfAlO_{x}$ gate dielectric by means of positron annihilation

Gate dielectric scaling for high-performance CMOS: from $SiO_{2}$ to high-K

HfSiON gate dielectric for CMOS applications

Extending the life of N/O stack gate dielectric with gate electrode engineering

Advanced oxynitride gate dielectrics for CMOS applications

Drastically improved NBTI lifetime by periodic plasma nitridation for 90 nm mobile applications at low voltage operation

Improvement in thermal stability of the interfacial layer for poly $Si/HfAlO_{x}$ gate stacks

Comparative study of carrier mobility and threshold voltage between N- and p-MOSFETs in TaN gate CMOS with EOT = 1.5-2 nm $HfAlO_{x}$

Dependence of electron mobility by remote coulomb scattering on dielectric constant distribution in stacked gate dielectrics

EOT scaling and device issues for high-k gate dielectrics

In-situ $HfSiON/SiO_{2}$ gate dielectric fabrication using hot wall batch system

Effects of nitrogen incorporation $HfAlO_{x}$ films on gate leakage current from XPS study of Hf bonding states

Further EOT scaling of $Ge/HfO_{2}$ over $Si/HfO_{2}$ MOS systems

Extended Abstracts of International Workshop on Gate Insulator. IWGI 2001 (IEEE Cat. No.01EX537)

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