NDLI: Intrinsic limitations on performance and reliability of i) Si oxynitride and ii) high-k T-M oxides, and silicate and aluminate alloy gate dielectrics

Content Provider	IEEE Xplore Digital Library
Author	Lucovsky, G.
Copyright Year	2001
Description	Author affiliation: Dept. of Phys., North Carolina State Univ., Raleigh, NC, USA (Lucovsky, G.)
Abstract	This paper has addressed intrinsic limitations in the performance of gate stacks for MOSFET devices that employ dielectrics other than SiO/sub 2/ or thermally-nitrided SiO/sub 2/. Since the alternative dielectrics include both i) Si oxynitride alloys and ii) high-k metal, T-M and R-E oxides, and silicate and aluminate alloys, it is necessary to identify the intrinsic similarities and differences between these two groups of materials. This has been done at two different levels, amorphous morphology of the non-crystalline dielectric structure, and the electronic structure. These two groups are significantly different, and in the opinion of the author, a fruitful comparison can be made by comparing Si oxynitride alloys and T-M/R-E silicate and aluminate alloys.
Sponsorship	JSAP: Japan Soc. Appl. Phys.
Starting Page	42
Ending Page	55
File Size	1361042
Page Count	14
File Format	PDF
ISBN	4891140216
DOI	10.1109/IWGI.2001.967544
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2001-11-01
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Japan Soc of Applied Physics
Subject Keyword	High K dielectric materials High-K gate dielectrics Bonding Silicon alloys Amorphous materials Morphology Dielectric devices Reliability engineering Dielectric materials Stability
Content Type	Text
Resource Type	Article

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