NDLI: Degradation mechanisms of AlGaN/GaN HEMTs on sapphire, Si, and SiC substrates under proton irradiation

Content Provider	IEEE Xplore Digital Library
Author	Koehler, A.D. Anderson, T.J. Hite, J.K. Weaver, B.D. Tadjer, M.J. Mastro, M.A. Greenlee, J.D. Specht, P. Porter, M. Weatherford, T.R. Hobart, K.D. Kub, F.J.
Copyright Year	2014
Description	Author affiliation: Naval Res. Lab., Power Electron., Washington, DC, USA (Koehler, A.D.; Anderson, T.J.; Hite, J.K.; Weaver, B.D.; Mastro, M.A.; Hobart, K.D.; Kub, F.J.) \|\| Univ. of California, Berkeley, Berkeley, CA, USA (Specht, P.) \|\| Naval Postgrad. Sch., Monterey, CA, USA (Porter, M.; Weatherford, T.R.)
Abstract	The degradation mechanisms of AlGaN/GaN high electron mobility transistors (HEMTs) grown on sapphire, Si, and SiC substrates, under 2 MeV proton irradiation are investigated. It was determined by electron channeling contrast imaging that the threading dislocation density of the AlGaN/GaN epitaxial layers is highest on sapphire substrates and lowest on SiC substrates. Photoluminescence spectroscopy confirmed the material quality order from worst to best to be AlGaN/GaN grown on sapphire, Si, and SiC substrates, respectively. The radiation response of sheet carrier density was not statistically different for HEMTs on each substrate, however the mobility degraded more for HEMTs with less initial dislocations (on SiC) than more defective HEMTs (on sapphire).
Starting Page	33
Ending Page	35
File Size	1874959
Page Count	3
File Format	PDF
ISBN	9781479954933
DOI	10.1109/WiPDA.2014.6964619
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-10-13
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Radiation effects Silicon carbide Proton radiation HEMTs Silicon MODFETs Gallium nitride Substrates GaN HEMT
Content Type	Text
Resource Type	Article

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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