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Content Provider | IEEE Xplore Digital Library |
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Author | Guy, I.L. Goldys, E.M. Muensit, S. |
Copyright Year | 2000 |
Description | Author affiliation: Div. of Inf. & Commun. Sci., Macquarie Univ., NSW, Australia (Guy, I.L.) |
Abstract | Piezoelectric coefficients of the wurtzite phase of the important semiconducting materials GaN and AlN have been measured using optical interferometry. Both the extensional and shear strain coefficients have been evaluated from direct measurements of the relevant displacements of the film surface. The measured value of the thickness coefficient d/sub 33/, was 2.0 pm V/sup -1/ for polycrystalline GaN and 2.8 pm V/sup -1/ for single crystal material. The measured d/sub 33/ coefficient for polycrystalline AlN was 4.0 pm V/sup -1/. The measured values of the d/sub 15/ coefficient were -3.1 pm V/sup -1/ for GaN and -3.6 pm V/sup -1/ for AlN. The electromechanical response is found to include a significant contribution from the nonlinear effect of electrostriction. The measured value of the electrostrictive coefficient M/sub 33/ in a polycrystalline sample of GaN was 1.2/spl times/10/sup -18/ m/sup 2/ V/sup -2/. The piezoelectric measurement also provides a simple method for identifying the positive direction of the c axis, which was found to be pointing away from the substrate for all films studied. |
Starting Page | 55 |
Ending Page | 58 |
File Size | 217627 |
Page Count | 4 |
File Format | |
ISBN | 0780358147 |
DOI | 10.1109/SIM.2000.939197 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 2000-07-03 |
Publisher Place | Australia |
Access Restriction | Subscribed |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | Piezoelectric films Optical interferometry Phase measurement Semiconductor materials Piezoelectric materials Strain measurement Semiconductivity Optical materials Electrostriction Gallium nitride |
Content Type | Text |
Resource Type | Article |
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