NDLI: The ESR characters of unintentionally doped 4H-SiC with Si ion implanted

Content Provider	IEEE Xplore Digital Library
Author	Ping Cheng Ming Wang Lizhi Wang Yuming Zhang Hui Guo
Copyright Year	2011
Description	Author affiliation: Information Engineering College, Ningbo Dahongying University, Ningbo, China (Ping Cheng; Ming Wang; Lizhi Wang) \|\| School of Microelectronics, Xi Dian UUniversity, Xi'an, China (Yuming Zhang; Hui Guo)
Abstract	The intrinsic defects in epitaxial semi-insulating 4H-SiC that are implanted by Si ion, annealing after implanted respectively are studied by electron spin resonance (ESR). The results show that the intrinsic defects in Si ion implanted and annealing are the same as that as-grown 4H-SiC consist of carbon vacancy (Vc) and complex-compounds-related Vc, which is to say Si ion implanted and annealing treatment have a few effects on the intrinsic defects in unintentionally doped 4H-SiC prepared by low pressure chemical vapor deposition. The ESR spectrum are the same as that as-grown samples with Xe light, which are illumination time changes the relative density of intrinsic defects in 4H-SiC; the relative density of intrinsic defects reaches a maximum when the illumination time is 2.5 min, and the ratio of Vc to complex compounds is minimized simultaneously. It can be deduced that some Vsi may be transformed to the complex-compounds-related Vc because of the illumination.
Starting Page	1340
Ending Page	1342
File Size	389643
Page Count	3
File Format	PDF
ISBN	9781612840871
e-ISBN	9781612840888
DOI	10.1109/EMEIT.2011.6023341
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-08-12
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Annealing Silicon carbide Electron spin resonance Lighting Xenon Semi-insulating 4H-SiC Silicon Intrinsic defects Epitaxial growth Substrates Low pressure chemical vapor deposition
Content Type	Text
Resource Type	Article

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