NDLI: An accurate prediction for as-implanted doping profile calibration using different ion implantation models

Content Provider	IEEE Xplore Digital Library
Author	Ningaraju, V. Jati, B.L.P. Gene Sheu Jun Bo Wang Subramanya, J. Amanullah, M. Sharma, A.K. Shao-Ming Yang
Copyright Year	2014
Description	Author affiliation: Dept. of Comput. Sci. & Inf. Eng., Asia Univ., Taichung, Taiwan (Ningaraju, V.; Jati, B.L.P.; Gene Sheu; Jun Bo Wang; Subramanya, J.; Amanullah, M.; Sharma, A.K.; Shao-Ming Yang)
Abstract	The simulation tool is very important to develop process and design a new device structures. Device characteristics and physics phenomena also can be analyzed and predicted using this tool. But, it also have the limitation such us the physical model to describe the nature behaviours accurately. Selecting the models should be defined correctly. One of the critical processes is ion implantation because it is important to make a junction and determine the breakdown. For getting accurate results, the doping concentration profile in simulation should be calibrated with experiment, like Secondary Ion Mass Spectrometry (SIMS) profile. In this paper, Taurus analytical and Monte Carlo ion implantation model was investigated. The calibration will be difficult by using Taurus Analytical default Model. Using Taurus model by calibrating parameter can give a good agreement SIMS. Monte Carlo ion implantation model generally can give good profile prediction without calibration.
Sponsorship	IEEE Malaysia Sect. PE Chapt.
Starting Page	408
Ending Page	412
File Size	4840792
Page Count	5
File Format	PDF
e-ISBN	9781479924226
DOI	10.1109/PEOCO.2014.6814463
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-03-24
Publisher Place	Malaysia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Analytical models Monte Carlo methods Ion implantation Monte Carlo implantation model Implants Educational institutions Taurus Analytical model Silicon SIMS Semiconductor process modeling
Content Type	Text
Resource Type	Article

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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