NDLI: A new analytical model for high frequency MOSFET noise

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A new analytical model for high frequency MOSFET noise

Content Provider	IEEE Xplore Digital Library
Author	Guerrieri, S.D. Bonani, F. Ghione, G. Alam, M.A.
Copyright Year	2001
Description	Author affiliation: Dipartimento di Elettronica, Politecnico di Torino, Italy (Guerrieri, S.D.)
Abstract	A new analytical approach to extract high frequency MOSFET noise is presented and its validation is carried out with careful comparison with numerical physics-based 2D noise simulations. The analytical formulation accounts for drain and gate noise spectra and their correlation, and extends the classical van der Ziel approach to short channel devices. The field dependency of the diffusivity is shown to affect the noise performances significantly in short-gate devices. The new model is well suited to be exploited in circuit simulation in conjunction with compact models such as BSIMA.
Sponsorship	IEEE Solid State Circuits Soc.
Starting Page	389
Ending Page	392
File Size	388919
Page Count	4
File Format	PDF
ISBN	0780365917
DOI	10.1109/CICC.2001.929807
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2001-05-09
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Analytical models Frequency MOSFET circuits Circuit noise Circuit simulation Microscopy Semiconductor device modeling CMOS technology Fluctuations Noise measurement
Content Type	Text
Resource Type	Article

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