NDLI: Process control and monitoring with laser interferometry based endpoint detection in chemical mechanical planarization

Content Provider	IEEE Xplore Digital Library
Author	Chan, D.A. Swedek, B. Wiswesser, A. Birang, M.
Copyright Year	1998
Description	Author affiliation: Appl. Mater. Inc., Santa Clara, CA, USA (Chan, D.A.)
Abstract	First, a brief presentation of the principles behind laser interferometry based in-situ endpoint detection is made, including the underlying theory of operation, system architecture and filtering methodology. This is followed by experimental data taken with various process wafers, including tungsten, copper, blanket oxide, silicon-on-oxide, shallow trench isolation (STI), and interlayer dielectric (ILD) wafers. Pre- and post-processing thickness data and removal rates are compared with ex-situ measurements for accuracy and repeatability. Finally, specific examples are discussed to show the benefits of in-situ removal rate monitoring and endpoint detection in chemical mechanical planarization for improved line monitoring and process control.
Starting Page	377
Ending Page	384
File Size	910164
Page Count	8
File Format	PDF
ISBN	0780343808
ISSN	10788743
DOI	10.1109/ASMC.1998.731624
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1998-09-23
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Process control Monitoring Interferometry Laser theory Filtering theory Tungsten Copper Dielectric measurements Thickness measurement Planarization
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Electrical and Electronic Engineering Electronic, Optical and Magnetic Materials

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Libarray of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Control of dielectric chemical mechanical polishing (CMP) using an interferometry based endpoint sensor

In Situ Endpoint Detection by Acoustic Emissions in Chemical–Mechanical Polishing of Metal Overlay

In situ endpoint detection by pad temperature in chemical-mechanical polishing of copper overlay

Feature Analysis and Modeling of 670 nm Laser Optical Endpoint Traces in Tungsten CMP

Development of slurry concentration adjustable tungsten chemical mechanical planarization process

Optimized process for tungsten chemical-mechanical planarization throughput improvement

Control methods for the chemical-mechanical polishing process in shallow trench isolation

Device dependent control of chemical-mechanical polishing of dielectric films

Process Performance Prediction for Chemical Mechanical Planarization (CMP) by Integration of Nonlinear Bayesian Analysis and Statistical Modeling

Process control and monitoring with laser interferometry based endpoint detection in chemical mechanical planarization

Similar Documents

Control of dielectric chemical mechanical polishing (CMP) using an interferometry based endpoint sensor

In Situ Endpoint Detection by Acoustic Emissions in Chemical–Mechanical Polishing of Metal Overlay

In situ endpoint detection by pad temperature in chemical-mechanical polishing of copper overlay

Feature Analysis and Modeling of 670 nm Laser Optical Endpoint Traces in Tungsten CMP

Development of slurry concentration adjustable tungsten chemical mechanical planarization process

Optimized process for tungsten chemical-mechanical planarization throughput improvement

Control methods for the chemical-mechanical polishing process in shallow trench isolation

Device dependent control of chemical-mechanical polishing of dielectric films

Process Performance Prediction for Chemical Mechanical Planarization (CMP) by Integration of Nonlinear Bayesian Analysis and Statistical Modeling

Process control and monitoring with laser interferometry based endpoint detection in chemical mechanical planarization