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  1. Journal of the Electron Devices Society
  2. Year : 2016 Volume : 4
  3. Issue 1
  4. All-Graphene Planar Double-Quantum-Dot Resonant Tunneling Diodes
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Year : 2016 Volume : 4
Issue 2
Issue 1
Table of contents
IEEE Journal of the Electron Devices Society publication information
High-Current Submicrometer Tri-Gate GaN High-Electron Mobility Transistors With Binary and Quaternary Barriers
Abnormal Output Characteristics of p-Type Low Temperature Polycrystalline Silicon Thin Film Transistor Fabricated on Polyimide Substrate
Threshold Switching Characteristics of Nb/NbO2/TiN Vertical Devices
Impact of Hot Carrier Aging on Random Telegraph Noise and Within a Device Fluctuation
Transparent and Flexible Thin Film Electroluminescent Devices Using HiTUS Deposition and Laser Processing Fabrication
All-Graphene Planar Double-Quantum-Dot Resonant Tunneling Diodes
IEEE Journal of the Electron Devices Society information for authors
Year : 2015 Volume : 3
Year : 2014 Volume : 2
Year : 2013 Volume : 1

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All-Graphene Planar Double-Quantum-Dot Resonant Tunneling Diodes

Content Provider IEEE Xplore Digital Library
Author Al-Dirini, F. Mohammed, M.A. Hossain, F.M. Nirmalathas, T.A. Skafidas, E.
Copyright Year 2013
Abstract This paper proposes a new class of resonant tunneling diodes (RTDs) that are planar and realizable with a single graphene nanoribbon. Unlike conventional RTDs, which incorporate vertical quantum well regions, the proposed devices incorporate two confined planar quantum dots within the single graphene nanoribbon, giving rise to a pronounced negative differential resistance (NDR) effect. The proposed devices, termed here as planar double-quantum-dot RTDs, and their transport properties are investigated using quantum simulations based on nonequilibrium Green's function formalism and the extended Huckel method. The proposed devices exhibit a unique current-voltage waveform consisting of a single pronounced current peak with an extremely high, in the order of 104, peak-to-valley ratio. The position of the current peak can be tuned between discrete voltage levels, allowing digitized tunability, which is exploited to realize multi-peak NDR devices.
Starting Page 30
Ending Page 39
Page Count 10
File Size 1219312
File Format PDF
ISSN 21686734
Volume Number 4
Issue Number 1
Language English
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date 2016-01-01
Publisher Place U.S.A.
Access Restriction Subscribed
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword Quantum dots Graphene Fabrication Nanoscale devices Geometry Resonant tunneling devices Resonant Tunneling Negative Differential Resistance NDR Planar Quantum Dot Tunable resonant tunneling negative differential resistance planar quantum dot tunable
Content Type Text
Resource Type Article
Subject Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering Biotechnology
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