NDLI: Very Low Pressure Magnetron Reactive Ion Etching of GaN and Al$_{ x }$Ga$_{1−x }$N Using Dichlorofluoromethane (Halocarbon 12)

Content Provider	SpringerLink
Author	Batoni, P. Patel, K. Burkhart, C. C. Shah, T. K. Iyengar, V. Ahrens, M. T. Morton, S. T. Bobbio, S. M. Stokes, E. B.
Copyright Year	2007
Abstract	In this work we report on the magnetron reactive ion etch (MRIE) technology for gallium nitride (GaN) and aluminum gallium nitride (Al$_{ x }$Ga$_{1−x }$N) using dichlorodifluoromethane (CCl$_{2}$F$_{2}$), commonly known as halocarbon 12, with etch rates greater than 1,000 and 840 Å/min, respectively. Magnetic confinement of a very low pressure (10$^{−4}$ Torr range) radio frequency (RF) discharge generates high-density plasmas, with low sheath voltages at the bounding surfaces, and very high dissociation of the source gas. Furthermore, the very low pressure of the etch process is characterized by long mean free paths so that sputtering contamination is reduced. MRIE chemistry has been monitored in situ by means of mass spectroscopy. Finally, we report on the successful fabrication of an indium gallium nitride (In$_{ x }$Ga$_{1−x }$N) blue light emitting diode (LED), whose fabrication sequence included the MRIE etching of GaN in CCl$_{2}$F$_{2}$.
Starting Page	1166
Ending Page	1173
Page Count	8
File Format	PDF
ISSN	03615235
Journal	Journal of Electronic Materials
Volume Number	36
Issue Number	9
e-ISSN	1543186X
Language	English
Publisher	Springer US
Publisher Date	2007-08-10
Publisher Place	Boston
Access Restriction	Subscribed
Subject Keyword	GaN AlGaN MRIE halocarbon 12 CCl$_{2}$F$_{2}$ dichlorodifluoromethane dry etch III-nitrides Solid State Physics and Spectroscopy Electronics and Microelectronics, Instrumentation Characterization and Evaluation of Materials Optical and Electronic Materials
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Electronic, Optical and Magnetic Materials Materials Chemistry Electrical and Electronic Engineering

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