NDLI: Bulk GaN Ion Cleaving

Content Provider	SpringerLink
Author	Moutanabbir, O. Gösele, U.
Copyright Year	2010
Abstract	Bulk or freestanding GaN is a key material in various devices other than the blue laser diodes. However, the high cost of bulk GaN wafers severely limits the large scale exploitation of these potential technologies. In this paper, we discuss some engineering issues involved in the application of the ion-cut process to split a thin layer from 2-inch freestanding GaN. This process combines the implantation of light ions and wafer bonding and can possibly be used to reduce the cost of the fabrication of GaN-based devices by allowing the transfer of several bulk quality thin layers from the same donor wafer. To achieve this multi-layer transfer several conditions must be fulfilled. Here issues related to bulk GaN surface irregularities and wafer bowing are discussed. We also describe a method to circumvent most of these problems and achieve high quality bonding.
Starting Page	482
Ending Page	488
Page Count	7
File Format	PDF
ISSN	03615235
Journal	Journal of Electronic Materials
Volume Number	39
Issue Number	5
e-ISSN	1543186X
Language	English
Publisher	Springer US
Publisher Date	2010-02-24
Publisher Place	Boston
Access Restriction	Subscribed
Subject Keyword	Bulk GaN ion-cut thin layer transfer ion implantation wafer bonding bow interfacial stress Solid State Physics Electronics and Microelectronics, Instrumentation Characterization and Evaluation of Materials Optical and Electronic Materials
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Electronic, Optical and Magnetic Materials Materials Chemistry Electrical and Electronic Engineering

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Bulk GaN Ion Cleaving

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