NDLI: Heteroepitaxial growth and characterization of monocrystal anatase TiO$_{2}$ films on epi-GaN (0001)/sapphire substrates

Content Provider	SpringerLink
Author	Zhao, Wei Feng, Xianjin Luan, Caina Xiao, Hongdi Ma, Jin
Copyright Year	2016
Abstract	Monocrystal anatase titanium dioxide (a-TiO$_{2}$) films have been deposited on epi-GaN (0001)/sapphire substrates by the metalorganic chemical vapor deposition (MOCVD) method with the substrate temperature varied from 550 to 700 °C. The structural analyses showed that the film deposited at 650 °C was pure a-TiO$_{2}$ monocrystal with the best crystalline quality. The epitaxial relationship between the film and GaN epilayer was determined as a-TiO$_{2}$ (001)‖GaN (0001) with a-TiO$_{2}$ [110]‖GaN 〈 $$ \bar{1}100 $$ 〉. The elemental composition and proportion were studied by the X-ray photoelectron spectroscopy (XPS) method, which proved the deposited film approximated stoichiometric TiO$_{2.}$ The films showed excellent transparency of ~90 % in the visible range with an optical band gap of 3.33 eV obtained for the 650 °C-deposited sample.
Starting Page	1082
Ending Page	1088
Page Count	7
File Format	PDF
ISSN	00222461
Journal	Journal of Materials Science
Volume Number	52
Issue Number	2
e-ISSN	15734803
Language	English
Publisher	Springer US
Publisher Date	2016-09-16
Publisher Place	New York
Access Restriction	Subscribed
Subject Keyword	Materials Science Characterization and Evaluation of Materials Polymer Sciences Continuum Mechanics and Mechanics of Materials Crystallography and Scattering Methods Classical Mechanics
Content Type	Text
Resource Type	Article
Subject	Mechanical Engineering Mechanics of Materials Ceramics and Composites Polymers and Plastics

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