NDLI: A scheme to improve PCE of differential-drive CMOS rectifier for low RF input power

Content Provider	SpringerLink
Author	Chang, Yuan Chouhan, Shailesh Singh Halonen, Kari
Copyright Year	2016
Abstract	In this paper, a scheme to improve power conversion efficiency (PCE) of differential-drive CMOS rectifier for low RF input power is proposed. Auxiliary transistors are utilized to provide forward body biasing for the primary transistors of the rectifier. As a result, the threshold voltages of the primary transistors are reduced. Hence, higher PCE is achieved for lower RF input power. The circuits are designed in a standard 180 nm CMOS technology. Measurement results exhibit a considerable PCE improvement by the proposed design at the RF input frequency of 916 MHz in the three-stage configuration. For 50 K $$\mathrm{{\Omega }}$$ resistive load, the proposed rectifier has a maximum 10.9 % PCE improvement and requires 2 dB less RF input power to achieve the comparable peak PCE.
Starting Page	113
Ending Page	124
Page Count	12
File Format	PDF
ISSN	09251030
Journal	Analog Integrated Circuits and Signal Processing
Volume Number	90
Issue Number	1
e-ISSN	15731979
Language	English
Publisher	Springer US
Publisher Date	2016-07-30
Publisher Place	New York
Access Restriction	Subscribed
Subject Keyword	CMOS rectifier Power conversion efficiency Differential-drive rectifier Forward body biasing Low RF input power Circuits and Systems Electrical Engineering Signal,Image and Speech Processing
Content Type	Text
Resource Type	Article
Subject	Surfaces, Coatings and Films Signal Processing Hardware and Architecture

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A scheme to improve PCE of differential-drive CMOS rectifier for low RF input power