NDLI: Tensile strained Ge membranes

Content Provider	IEEE Xplore Digital Library
Author	Shah, V.A. Trushkevych, O. Myronov, M. Rhead, S. Halpin, J. Edwards, R. Leadley, D.R.
Copyright Year	2014
Description	Author affiliation: Dept. of Phys., Univ. of Warwick, Coventry, UK (Shah, V.A.; Trushkevych, O.; Myronov, M.; Rhead, S.; Halpin, J.; Edwards, R.; Leadley, D.R.)
Abstract	Germanium membranes of 50-1000 nm thickness have been fabricated by a combination of epitaxial growth on a Si substrate and simple etching processes. The biaxial tensile strain in these membranes has been measured by high-resolution X-ray diffraction and by ultrasonic vibrational spectroscopy. The later technique also shows that membranes have a Q-factor of ~3000 at low temperature. The stain in these membranes is extremely isotropic and the surface is observed to be very smooth, with an rms roughness of below 2 nm. The process of membrane fabrication also serves to remove the misfit dislocation network that originally forms at the Si/Ge interface, with benefits for the mechanical, optical and electrical properties of the crystalline membranes.
Starting Page	137
Ending Page	140
File Size	436790
Page Count	4
File Format	PDF
ISBN	9781479937189
DOI	10.1109/ULIS.2014.6813917
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-04-07
Publisher Place	Sweden
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Q-factor membrane Resonant frequency Conductivity Germanium Silicon Epitaxial growth germanium Substrates epitaxy
Content Type	Text
Resource Type	Article

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