NDLI: A closed-form physical back-gate-bias dependent quasi-saturation model for SOI lateral DMOS devices with self-heating for circuit simulation

Content Provider	IEEE Xplore Digital Library
Author	Liu, C.M. Shone, F.C. Kuo, J.B.
Copyright Year	1995
Description	Author affiliation: Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan (Liu, C.M.; Shone, F.C.; Kuo, J.B.)
Abstract	This paper reports a closed-form physical back-gate-bias dependent quasi-saturation model for silicon-direct-bonded lateral SOI DMOS devices with self-heating. By solving Poisson's equation in the substrate direction with the thermal equation, a closed-form physical SOI DMOS quasi-saturation model considering lattice temperature suitable for circuit simulation has been derived. Based on the analytical model, the surface state above the field oxide may effectively decrease the back gate bias effect on the quasi-saturation behavior in the SOI DMOS device. With a more negative back gate bias, the thermal effect on quasi-saturation is less influential.
Starting Page	149
Ending Page	152
File Size	324058
Page Count	4
File Format	PDF
ISBN	078032773X
DOI	10.1109/VTSA.1995.524652
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1995-05-31
Publisher Place	Taiwan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Poisson equations Circuit simulation Lattices Voltage MOS devices Thin film devices Doping Region 2 Temperature Analytical models
Content Type	Text
Resource Type	Article

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A closed-form physical back-gate-bias dependent quasi-saturation model for SOI lateral DMOS devices with self-heating for circuit simulation