NDLI: 1 GHz 50 mu W 1/2 frequency divider fabricated on ultra-thin SIMOX substrate

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1 GHz 50 mu W 1/2 frequency divider fabricated on ultra-thin SIMOX substrate

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1 GHz 50 mu W 1/2 frequency divider fabricated on ultra-thin SIMOX substrate

Content Provider	IEEE Xplore Digital Library
Author	Fujishima, M. Yamashita, M. Ikeda, M. Asada, K. Omura, Y. Izumi, K. Sakai, T. Sugano, T.
Copyright Year	1992
Description	Author affiliation: Dept. of Electron. Eng., Tokyo Univ., Japan (Fujishima, M.; Yamashita, M.; Ikeda, M.; Asada, K.)
Abstract	Frequency dividers were fabricated on SIMOX substrates with 50-nm SOI layer, 80-nm buried oxide, and gate oxide of 7-nm thickness. Typical drain current and voltage characteristics are given. It is shown that the 1/2 frequency divider can operate at 2.5 GHz, and its power dissipation is 50 mu W at 1 GHz. It is concluded that deep-submicron CMOS circuits on SOI structures are highly promising for low-power-dissipation applications.
Starting Page	46
Ending Page	47
File Size	335007
Page Count	2
File Format	PDF
ISBN	0780307011
DOI	10.1109/VLSIC.1992.229243
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1992-06-04
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Frequency conversion Voltage Silicon on insulator technology Power dissipation Energy consumption Inverters VHF circuits Parasitic capacitance Clocks Substrates
Content Type	Text
Resource Type	Article

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