NDLI: Comparison of oxide wearout resulting from DC and pulsed charge injection

Content Provider	IEEE Xplore Digital Library
Author	Vigrass, W.J. Dumin, D.J.
Copyright Year	1988
Description	Author affiliation: Dept. of Electr. & Comput. Eng., Clemson Univ., SC, USA (Vigrass, W.J.; Dumin, D.J.)
Abstract	Gate leakage currents in VLSI MOS transistors can be studied using MOS capacitors which consist of a thin-oxide dielectric sandwiched between a gate electrode and the semiconductor substrate. Application of voltage to the gate can result in small amounts of current passing through the oxide film as a consequence of quantum-mechanical tunneling. This current may in time cause changes in the film's dielectric properties which result in a degradation of the capacitor's electrical characteristics. The factors governing these dielectric changes have been studied. Since actual devices operate in a pulsed rather than a DC mode, it is necessary to compare the effects observed under both conditions.
Starting Page	225
Ending Page	227
File Size	121038
Page Count	3
File Format	PDF
DOI	10.1109/SECON.1988.194848
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1988-04-10
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Dielectric substrates Semiconductor films Leakage current Very large scale integration MOSFETs MOS capacitors Electrodes Voltage Tunneling Dielectric films
Content Type	Text
Resource Type	Article

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Comparison of oxide wearout resulting from DC and pulsed charge injection