NDLI: High-Q variable inductor using redistributed layers for Si RF circuits

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Table of contents

Advances in SiGe HBT BiCMOS technology

62-GHz 24-mW static SiGe frequency divider

A 47 GHz monolithically integrated SiGe push-push oscillator

An 8.4-12.0 GHz down-conversion mixer implemented in SiGe HBT technology

A 1-6 GHz monolithic up-conversion mixer with input/output active baluns using SiGe HBT process

A low power 5 GHz direct digital synthesizer designed in SiGe technology

High-Q integrated passive elements for high frequency applications

Patch antenna on micromachined silicon

Design of RF filters using silicon integrated passive components

Measurement and modeling of coupling effects of CMOS on-chip coplanar inductors

Wafer-level chip-scale packaging for low-end RF products

Wafer-level three-dimensional monolithic integration for heterogeneous silicon ICs

Systems engineering of RF system-on-wafer applications in SiGe [radar active electronic steered array example]

On the design and implementation of transmission lines in commercial SiGe HBT BiCMOS processes

A manufacturable high-k MIM dielectric with outstanding reliability and voltage linearity for RF and mixed-signal technologies

High-speed SiGe HBT technology and applications to mm-wave circuits

Compact Doppler sensor operating at 31-32 GHz using a SiGe HBT MMIC and patch antennas

Design and characterization of a high-resistivity silicon traveling wave amplifier for 10 Gb/s optical communication systems

A 10GHz nonlinear cosine-weighted digital-to-analog converter for high-speed direct digital synthesis

GPS low noise amplifier with high immunity to wireless jamming signals

MM-wave transceivers using SiGe HBT technology

Achieving frequency-agile radio

A 1-V 5 GHz low phase noise LC-VCO using voltage-dividing and bias-level shifting technique

Substrate coupling noise issues in silicon technology

Simulation of self-heating in advanced high-speed SiGe bipolar circuits using the temperature simulator TESI

Measurement and 3D simulations of substrate noise isolation and resistance for mixed signal applications

Mechanical planar biaxial strain effects in Si/SiGe HBT BiCMOS technology

High mobility SiGe/Si n-type structures and field effect transistors on sapphire substrates

A comparison of Si CMOS, SiGe BiCMOS, and InP HBT technologies for high-speed and millimeter-wave ICs

Speed and power performance comparison of state-of-the-art CMOS and SiGe RF transistors

A statistical tool for probing the coupling between noisy traps in semiconductor devices, with application to 1/f noise in SiGe HBTs

Microscopic RF noise simulation and noise source modeling in 50 nm gate length CMOS

Low-frequency noise of 90 nm nFETs: hot-carrier degradation and deuterium effect

Modeling of distortion in bipolar transistors - a review

Boosting up performance of power SiGe HBTs using advanced layout concept

A high efficient dual path power amplifier for IS-95 CDMA handset applications

In search of a Si/SiGe THz quantum cascade laser

High frequency capacitive micromechanical resonators with reduced motional resistance using the HARPSS technology

RF-MEMS SPDT switch on silicon substrate for space applications

Recent developments in porous silicon substrates for RF/microwave applications

A monolithic reconfigurable tuner with ohmic contact MEMS switches for efficiency optimization of X-band power amplifiers

Reliability investigation on a fully suspended redundancy ring

Analysis and circuit modeling of on-chip transformers

CMOS LNA design for system-on-chip receiver stages

Modeling of power supply parasitics for selecting on-wafer bypass capacitance in high-speed IC designs

A 1.575 GHz BiCMOS GPS low noise amplifier for low power application

SiGe BiCMOS LNA meeting FCC Part 15 ultra-wideband restrictions

High-Q variable inductor using redistributed layers for Si RF circuits

A compact nonlinear model for coplanar waveguides on silicon substrates

Dynamic characterization and model comparison of high frequency FET devices

Macromodeling for RF passives via circuit reduction of VPEC model

RF MEMS resonator for CMOS back-end-of-line integration

Monolithically integrated IMPATT diodes for Ka-band transmitters

Development of scalable models for patterned-ground-shield inductors in SiGe BiCMOS technology

Modeling and characterization of integrated passive elements for applications in silicon high frequency systems

Extracting of substrate network resistances in RF CMOS transistors

SOI voltage controlled ring oscillator

Bridging the gap between microscopic and macroscopic theories of noise in bipolar junction transistors

A novel low power low voltage LNA and mixer for WLAN IEEE 802.11a standard

A direct method to extract the substrate resistance components of RF MOSFETs valid up to 50 GHz

40 GHz miniature bandpass filter design in standard CMOS process

A generic architecture for multi-modulus dividers in low-power and high-speed frequency synthesis

A SiGe HBT 24 GHz sub-harmonic direct-conversion IQ-demodulator

24 and 36 GHz SiGe HBT power amplifiers

Characterization and modeling of high frequency monolithic PIN diodes on SOI substrate

Attenuation and dispersion modeling of coplanar waveguides on Si: free carriers contribution

A novel design of an asymmetric D-latch

Optimization of MEMS Ku-band phase shifter

RF small signal modeling of tri-gate /spl Omega/ MOSFETs implemented on bulk Si wafers

Microstrip circuits on micromachined silicon

Design of a monolithic 30 GHz branch line coupler in SiGe HBT technology using 3D EM simulation

A wide tuning range CMOS VCO using variable inductor

Accurate AC transistor characterization to 110 GHz using a new four-port self-calibrated extraction technique

The resonance phase transistor cascode circuit

Efficient encoding scheme for ultra-fast flash ADC

A small-signal, RF simulation study of multiple-gate and silicon-on-insulator MOSFET devices

Efficient design methodology of polymer based RF MEMS switches

Synthesized high-impedance CMOS thin-film transmission line

Distributed amplifier design for low noise applications

RF performance degradation in pMOS transistors due to hot carrier and soft breakdown effects

An 8.5 GHz SiGe-based amplifier using fully self-aligned double mesa SiGe HBTs

Integrated electronic equalizer for dispersion compensation in 10 Gb/s fiber networks

Development of characterization methods for micromachined embedded test structures

Battery-less wireless communication system through human body for in-vivo healthcare chip

14 GHz MEMS 4-bit phase shifter on silicon

Design and optimization of silicon-based patch antennas using time-domain techniques

A novel low power, class AB SiGe LNA for high dynamic range wireless communications at RF frequencies

2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers.

2001 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems. Digest of Papers (IEEE Cat. No.01EX496)

2000 Topical Meetings on Silicon Monolithic Integrated Circuits in RF Systems. Digest of Papers (Cat. No.00EX397)

1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems. Digest of Papers (Cat. No.98EX271)

High-Q variable inductor using redistributed layers for Si RF circuits

Content Provider	IEEE Xplore Digital Library
Author	Sugawara, H. Ito, H. Okada, K. Itoi, K. Sato, M. Abe, H. Ito, T. Masu, K.
Copyright Year	2004
Description	Author affiliation: Precision & Intelligence Lab., Tokyo Inst. of Technol., Yokohama, Japan (Sugawara, H.; Ito, H.; Okada, K.)
Abstract	We present a high-Q variable inductor using redistributed layers, whose inductance is of nH-order for GHz applications. The inductance can be varied by shielding the magnetic flux by means of a metal plate above the inductor. The metal plate is moved using a MEMS actuator. At 2 GHz, the measured inductance is varied from 4.80 nH to 2.27 nH, i.e., the variable range is 52.6%. The maximum value of quality factor is 50.1.
Sponsorship	IEEE Microwave Theory and Techniques Soc. Georgia Electron. Design Center at Georgia Tech. NASA Glenn Res. Center
Starting Page	187
Ending Page	190
File Size	948791
Page Count	4
File Format	PDF
ISBN	0780387031
DOI	10.1109/SMIC.2004.1398199
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2004-09-08
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Inductors Radio frequency Circuits Magnetic flux Inductance Spirals Actuators Micromechanical devices Q factor Eddy currents
Content Type	Text
Resource Type	Article

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