NDLI: Breakdown voltage enhancement of AlGaN/GaN high electron mobility transistors using annealing technique

Content Provider	IEEE Xplore Digital Library
Author	Lee, J. Liu, D. Lu, W.
Copyright Year	2003
Description	Author affiliation: Dept. of Electr. Eng., Ohio State Univ., Columbus, OH, USA (Lee, J.; Liu, D.; Lu, W.)
Abstract	A method to enhance the breakdown voltage performance of AlGaN/GaN HEMTs using post-annealing technique is reported in this paper. The transistors were annealed at 900 /spl deg/C for 30 seconds in a rapid thermal annealing system. After metallization, devices were annealed at 700 /spl deg/C in a furnace to improve breakdown voltages. The typical drain current-voltage characteristics of HEMTdevice with 0.3 /spl mu/m gate length and 100 /spl mu/m gate width is studied by experimental results.
Sponsorship	IEEE Electron Device Soc. Nat. Sci. Found. Army Research Laboratory Naval Research Laboratory Army Research Office Nat. Inst. of Standards and Technol. Elec. and Comput. Eng. Dept., Univ. of Maryland
Starting Page	112
Ending Page	113
File Size	88163
Page Count	2
File Format	PDF
ISBN	0780381394
DOI	10.1109/ISDRS.2003.1272020
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2003-12-10
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Aluminum gallium nitride Gallium nitride Annealing Breakdown voltage Threshold voltage Performance gain Electron mobility Radio frequency Microwave devices Metallization
Content Type	Text
Resource Type	Article

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Breakdown voltage enhancement of AlGaN/GaN high electron mobility transistors using annealing technique