NDLI: On the extraction of oxide thickness and sub-band energy shift in thin oxide MOS capacitors with permeable gates

Content Provider	IEEE Xplore Digital Library
Author	Dalla Serra, A. Widdershoven, F. Palestri, P. Selmi, L.
Copyright Year	2001
Description	Author affiliation: DIEGM, Udine Univ., Italy (Dalla Serra, A.)
Abstract	Accurate extraction of the gate dielectric thickness of MOS devices (t/sub ox/) by electrical means is becoming increasingly difficult because quantum mechanical (QM) effects complicate the modeling of the free carrier charge and differential capacitance, hence the derivation of analytical expressions relating t/sub ox/ to easily measurable parameters. A simple and promising technique to locally extract t/sub ox/ and other quantization parameters from measured C-V curves was recently proposed, based on an empirical charge model. This technique was shown to provide reasonably accurate estimates of t/sub ox/ down to /spl ap/ 4 nm. In this paper we exploit the above mentioned technique as a vehicle to investigate the impact of carrier quantization and wave function penetration in ultra-thin oxides on the accuracy of oxide thickness extraction procedures. To this purpose the vehicle procedure is applied to simulated C-V curves obtained from an accurate quantum mechanical model of the MOS stack.
Sponsorship	IEEE
Starting Page	597
Ending Page	600
File Size	307435
Page Count	4
File Format	PDF
ISBN	0780374320
DOI	10.1109/ISDRS.2001.984590
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2001-12-05
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	ISDRS-Univ of Maryland
Subject Keyword	Quantum mechanics Current measurement Charge measurement Quantization Capacitance-voltage characteristics Vehicles Dielectric devices MOS devices Quantum capacitance Capacitance measurement
Content Type	Text
Resource Type	Article

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