NDLI: Re-evaluating impurity levels in crystal growth for C-SI: Considerations for growing ingots with reduced impurities for higher cell efficiencies

Content Provider	IEEE Xplore Digital Library
Author	Carberry, J. Skumanich, A.
Copyright Year	2011
Description	Author affiliation: Mossey Creek Solar, Jefferson City Tennessee 37760 (Carberry, J.) \|\| SolarVision Co, 412 Los Gatos Almaden Road, Los Gatos (Silicon Valley), CA 95032 (Skumanich, A.)
Abstract	To facilitate the drive to grid parity, it is critical to optimize the starting material for improved cell performance. The target of this research is to investigate various approaches to reduce the contamination from impurities during the growing of the c-Si starting material ingots. Using different coatings on the containment vessels for silicon melting, and based on different growing conditions, it is possible to determine an improved approach for reduced impurity content. The goal is to establish a cost & technology viable mode of lowering impurity levels to provide better cell efficiency to drive to lower overall $/W. In addition, the relative impact of grain boundaries vs impurities as sources for recombination which lowers cell efficiencies is assessed. Experiments are performed on growth of c-Si ingot material using both standard modes, as well as newly developing techniques, with various crucible coatings to control the level of impurities. Different coatings for the crucibles are investigated and show the impact on impurity control. Some of the materials growth was done in conjunction with Oak Ridge National Labs. The results indicate that the level of impurities can be reduced by the proper choice of conditions and coatings, leading to improvements in the starting materials and hence for better cell efficiency. The results will be discussed in the context of directions for ingot growth at lower costs, contrasting prior alternative approaches, current best practices, as well as novel alternatives for future development.
Starting Page	002129
Ending Page	002132
File Size	63394
Page Count	4
File Format	PDF
ISBN	9781424499663
ISSN	01608371
e-ISBN	9781424499656
DOI	10.1109/PVSC.2011.6186375
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-06-19
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Impurities Silicon Coatings Grain boundaries Iron Stress
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Electrical and Electronic Engineering Control and Systems Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Mr. Siddhartha Mukherjee siddhartha@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	ndl-support@iitkgp.ac.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Libarray of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Formation mechanism of twin boundaries in silicon multicrystals during crystal growth

Czochralski growth of silicon bicrystals

Carbon related defects and iron distribution in cast-grown polycrystalline silicon

Impurity effects on the formation of grain boundaries during solidification of solar cell grade silicon in situ HREM observation

Growth and Characterization of Multicrystalline Silicon Ingots Grown by Directional Solidification Technique

Recombination effects and impurity segregation at grain boundaries in polycrystalline silicon

Growth of Si single bulk crystals inside Si melts by the noncontact crucible method using silica crucibles without coating Si particles

Modeling the size distribution of iron silicide precipitates in multicrystalline silicon

Investigation of crystal growth behavior of silicon melt for growing high quality polycrystalline silicon by cast method

Re-evaluating impurity levels in crystal growth for C-SI: Considerations for growing ingots with reduced impurities for higher cell efficiencies

Similar Documents

Formation mechanism of twin boundaries in silicon multicrystals during crystal growth

Czochralski growth of silicon bicrystals

Carbon related defects and iron distribution in cast-grown polycrystalline silicon

Impurity effects on the formation of grain boundaries during solidification of solar cell grade silicon in situ HREM observation

Growth and Characterization of Multicrystalline Silicon Ingots Grown by Directional Solidification Technique

Recombination effects and impurity segregation at grain boundaries in polycrystalline silicon

Growth of Si single bulk crystals inside Si melts by the noncontact crucible method using silica crucibles without coating Si particles

Modeling the size distribution of iron silicide precipitates in multicrystalline silicon

Investigation of crystal growth behavior of silicon melt for growing high quality polycrystalline silicon by cast method

Re-evaluating impurity levels in crystal growth for C-SI: Considerations for growing ingots with reduced impurities for higher cell efficiencies