NDLI: Effect of buffer layers on p-i-n a-Si:H solar cells deposited at high rate utilising an expanding thermal plasma

Content Provider	IEEE Xplore Digital Library
Author	Korevaar, B.A. Petit, A.M.H.N. Smit, C. van Swaaij, R.A.C.M.M. van de Sanden, M.C.M.
Copyright Year	2002
Description	Author affiliation: DIMES, Delft Univ. of Technol., Netherlands (Korevaar, B.A.; Petit, A.M.H.N.; Smit, C.; van Swaaij, R.A.C.M.M.)
Abstract	With a cascaded arc expanding thermal plasma intrinsic amorphous silicon can be deposited at growth rates varying from 0.2 to 10 nm/s. With increasing growth rate good material is obtained at higher deposition temperatures. At higher deposition temperatures the player is deteriorated when the cell is deposited in a p-i-n sequence. A buffer layer can be used as a 'soft start' for the ETP layer and as protection of the p-layer from high deposition temperatures. In this paper we will discuss the effect on p-i-n solar cells when a buffer layer is incorporated.
Sponsorship	IEEE Electron Devices Soc
Starting Page	1230
Ending Page	1233
File Size	330593
Page Count	4
File Format	PDF
ISBN	0780374711
ISSN	10608371
DOI	10.1109/PVSC.2002.1190830
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2002-05-19
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Buffer layers PIN photodiodes Photovoltaic cells Thermal expansion Plasma temperature Plasma sources Plasma materials processing Plasma density Production Physics
Content Type	Text
Resource Type	Article

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Effect of buffer layers on p-i-n a-Si:H solar cells deposited at high rate utilising an expanding thermal plasma