NDLI: Silicon-germanium power devices at low temperatures for deep-space applications

Content Provider	IEEE Xplore Digital Library
Author	Vijh, A. Kapoor, V.J.
Copyright Year	2002
Description	Author affiliation: Nanotechnology Res. Center, Toledo Univ., OH, USA (Vijh, A.; Kapoor, V.J.)
Abstract	Silicon-germanium heterostructure. based 1-watt n-channel metal-oxide-semiconductor modulation-doped field effect transistors (MOS-MODFETs) with 6 /spl mu/m gate lengths and 1 mm total gate widths have been designed, fabricated and tested from 300 K to 90 K. The devices were fabricated by an ion-implanted process and employ a low-temperature thermal oxide and PECVD deposited oxide as the gate insulator. The devices showed a saturation current of approximately 77 mA at V/sub DS/=14 V, V/sub GS/=5V at 90 K, corresponding to a power dissipation of 1 W. Because they employ oxide as a gate dielectric, the devices have a low gate leakage current of <1 nA at V/sub GS/=10 V.
Sponsorship	IEEE Electron Devices Soc. IEEE Microwave Theory & Techniques Soc. Office of Naval Res. Air Force Office of Sci. Res. Aixtron Corp
Starting Page	270
Ending Page	275
File Size	451430
Page Count	6
File Format	PDF
ISBN	0780374789
DOI	10.1109/LECHPD.2002.1146763
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2002-08-08
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Germanium silicon alloys Silicon germanium Temperature Metal-insulator structures MODFETs HEMTs Insulator testing Dielectrics and electrical insulation Power dissipation Dielectric devices
Content Type	Text
Resource Type	Article

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